2SK2641-01_01 FUJI [Fuji Electric], 2SK2641-01_01 Datasheet - Page 3

• Manufacturer Part Number: 2SK2641-01_01
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK2641-01
400
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
10
10
10
10
0
250V
-1
-2
Forward characteristic of reverse of diode
0.0
1
0
0
-50
RDS(on)=f(Tch):ID=5A,VGS=10V
VGS=f(Qg):ID=10A,Tch=25°C
IF=f(VSD):80µs Pulse test,VGS=0V
Drain-source on-state resistance
Typical gate charge characteristic
100V
Vcc=400V
20
0.2
0
40
0.4
60
Qg [nC]
0.6
Tch [
VSD [V]
50
o
C]
max.
80
0.8
Tch=25
100
1.0
100
o
C typ.
typ.
120
1.2
140
150
1.4
40
35
30
25
20
15
10
5
0
100p
250
200
150
100
10n
10p
50
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1n
0
10
0
Avalanche energy derating
Eas=f(starting Tch):Vcc=50V,I
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
-50
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
-2
10
0
-1
50
Starting Tch [
FUJI POWER MOSFET
VDS [V]
Tch [
10
50
0
o
C]
max.
typ.
min.
o
C]
100
AV
=10A
100
10
1
Ciss
Coss
Crss
150
150
10
2
3