2SK2661_06 TOSHIBA [Toshiba Semiconductor], 2SK2661_06 Datasheet

2SK2661_06

Manufacturer Part Number

2SK2661_06

Description

Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK2661_06.pdf (6 pages)

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Chopper Regulator, DC–DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain–source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain–source voltage

Drain–gate voltage (R

Gate–source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

= 90 V, T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV)

Pulse (Note 1)

= 20 kΩ)

= 25°C (initial), L = 12.2 mH, R

(Note 1)

(Note 2)

: I

: V

DSS

= 2.0~4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch–c)

th (ch–a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK2661

| = 4.0 S (typ.)

= 1.35 Ω (typ.)

= 10 V, I

−55~150

Rating

Max

1.67

83.3

500

±30

180

150

7.5

= 500 V)

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 5 A

Weight: 2.0 g (typ.)

JEDEC

JEITA

TOSHIBA

TO-220AB

2-10P1B

SC-46

2006-11-02

2SK2661

Unit: mm

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2SK2661_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV) Chopper Regulator, DC–DC Converter and Motor Drive Applications Low drain–source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th Absolute Maximum Ratings ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate–source breakdown voltage Drain cut–off current Drain–source breakdown voltage Gate threshold voltage Drain–source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn–on time Switching time Fall time Turn–off ...

Page 3

3 2SK2661 2006-11-02 ...

Page 4

4 2SK2661 2006-11-02 ...

Page 5

Ω 12 2SK2661 1 ⎛ B ⎞ VDSS ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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