2SK2744_06 TOSHIBA [Toshiba Semiconductor], 2SK2744_06 Datasheet
2SK2744_06
Manufacturer Part Number
2SK2744_06
Description
Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK2744_06.pdf
(3 pages)
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
•
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
= 25 V, T
Characteristics
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 58 μH, R
= 1.5~3.5 V (V
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
DS
| = 27 S (typ.)
AS
AR
stg
D
ch
D
2SK2744
= 10 V, I
= 15 mΩ (typ.)
R
R
Symbol
th (ch-c)
th (ch-a)
DS
= 50 V)
−55~150
D
Rating
G
12.5
±20
180
125
150
50
50
45
95
45
= 1 mA)
1
= 25 Ω, I
Max
1.0
50
AR
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
= 45 A
V
V
V
A
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURSE
2−16C1B
2006-11-17
―
―
2SK2744
Unit: mm
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2SK2744_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Chopper Regulator, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...