TC7MBL3253CFK TOSHIBA [Toshiba Semiconductor], TC7MBL3253CFK Datasheet

no-image

TC7MBL3253CFK

Manufacturer Part Number
TC7MBL3253CFK
Description
CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TC7MBL3253CFK.pdf (12 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
TC7MBL3253CFK
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TC7MBL3253CFK(EL)
Manufacturer:
TSOH
Quantity:
8 983
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
TC7MBL3253CFK(EL)
Manufacturer:
TOSHIBA
Quantity:
2 410
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
TC7MBL3253CFK(EL)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Dual 1-of-4 FET Multiplexer/Demultiplexer
2bit 1-of-4 Multiplexer/Demultiplexer. The low on-resistance of
the switch allows connections to be made with minimal
propagation delay time.
multiplexer/demultiplexer with common select input (S1, S0) and
output enable ( OE ). The A input is connected to the B1 to B4
outputs as determined by the combination of both the select
input (S1, S0) and output enable ( OE ). When the output enable
( OE ) input is held at “H” level, the switches are open regardless
of the state of the select inputs, and a high-impedance state
exists between the switches.
discharge.
Features
•
•
•
•
•
•
Pin Assignment
Note: When mounting VQON package, the type of recommended
TC7MBL3253CFT,TC7MBL3253CFK,TC7MBL3253CFTG
GND
The TC7MBL3253C is a Low Voltage/Low Capacitance CMOS
This
All inputs are equipped with protection circuits against static
1
1B2
1B4
1B3
1B1
OE
Operating voltage: V
On-capacitance:
On-resistance:
ESD performance: Machine model ≥ ±200 V
Power-down protection for inputs ( OE and I/O)
Package: TSSOP16, VSSOP16 (US16), VQON16
S1
1A
flux is RA or RMA.
FT (TSSOP16-P-0044-0.65A)
FK (VSSOP16-P-0030-0.50)
1
2
3
4
5
6
7
8
device
(top view)
consists
(top view)
C
R
Human body model ≥ ±2000 V
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
CC
I/O
ON
= 13 pF Switch On (typ.) @ V
= 1.65 to 3.6 V
= 9 Ω (typ.) @ V
of
16
15
14
13
12
11
10
9
two
V
2
S0
2B4
2B3
2B2
2B1
2A
OE
CC
individual
CC
= 3 V, V
four-inputs
I/O
1B4
1B3
1B2
1B1
CC
= 0 V
1
= 3 V
1
2
3
4
FTG (VQON16-P-0303-0.50)
1A GND
S1
16
5
1
OE
15
6
Weight
TSSOP16-P-0044-0.65A:
VSSOP16-P-0030-0.50:
VQON16-P-0303-0.50:
TC7MBL3253CFT
TC7MBL3253CFK
TC7MBL3253CFTG
V
TC7MBL3253CFT/FK/FTG
2A
14
CC
7
2
2B1
13
OE
8
12
11
10
9
2B4
2B3
2B2
S0
0.06 g (typ.)
0.02 g (typ.)
0.013 g (typ.)
2009-02-02

Related parts for TC7MBL3253CFK

Image
Part Number
Description
Manufacturer
Datasheet
Request R
TD62001APG
Part Number:
TD62001APG
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
TD62001APG.pdf (13 pages)
TD74BC541P
Part Number:
TD74BC541P
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
TD74BC541P.pdf (7 pages)
2SJ567_09
Part Number:
2SJ567_09
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ567_09.pdf (6 pages)
2SJ610_09
Part Number:
2SJ610_09
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ610_09.pdf (6 pages)
2SJ681_09
Part Number:
2SJ681_09
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ681_09.pdf (6 pages)
MG100Q2YS65H
Part Number:
MG100Q2YS65H
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS65H.pdf (6 pages)
MG300J2YS40
Part Number:
MG300J2YS40
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG300J2YS40.pdf (2 pages)
MG100Q2YS11
Part Number:
MG100Q2YS11
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS11.pdf (5 pages)
MP7003
Part Number:
MP7003
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP7003.pdf (7 pages)
MG30G6EL2
Part Number:
MG30G6EL2
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG30G6EL2.pdf (4 pages)
MP6759
Part Number:
MP6759
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP6759.pdf (5 pages)
MIG400J101H
Part Number:
MIG400J101H
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG400J101H.pdf (8 pages)
MIG30J103H
Part Number:
MIG30J103H
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG30J103H.pdf (10 pages)
MG600J2YS60A
Part Number:
MG600J2YS60A
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG600J2YS60A.pdf (9 pages)
MG1200V1US51
Part Number:
MG1200V1US51
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG1200V1US51.pdf (4 pages)

TC7MBL3253CFK Summary of contents

Page 1

... FTG (VQON16-P-0303-0.50 1B4 1 2B4 2 1B3 2B3 3 1B2 2B2 4 1B1 2B1 GND 1 TC7MBL3253CFT/FK/FTG TC7MBL3253CFT TC7MBL3253CFK TC7MBL3253CFTG Weight TSSOP16-P-0044-0.65A: 0.06 g (typ.) VSSOP16-P-0030-0.50: 0.02 g (typ.) VQON16-P-0303-0.50: 0.013 g (typ 2B4 10 2B3 9 2B2 ...

Page 2

Truth Table Inputs System Diagram Function S0 A port = B1 port L A port = B2 port H A ...

Page 3

Absolute Maximum Ratings (Note) Characteristic Power supply range Control pin input voltage Switch=Off CC Switch terminal I/O voltage Switch=On Clump diode current Switch I/O current Power dissipation DC V /GND current CC Storage temperature Note: Exceeding ...

Page 4

Electrical Characteristics DC Characteristics (Ta = −40~85°C) Parameter Symbol “H” level V Input voltage ( OE , S1, S0) “L” level V Input leakage current S1, S0) Power-off leakage current I OFF Off-state leakage current I ...

Page 5

AC Characteristics (Ta = −40~85°C) Characteristics Output enable time ( OE to bus) Output enable time (S1 bus) Output disable time ( OE to bus) Output disable time (S1 bus) Capacitive Characteristics Characteristics Control pin input ...

Page 6

Characteristic (typ.) Ta=25℃ =2. 0.5 =24mA 1 [ TC7MBL3253CFT/FK/FTG =3. =30mA IS 2.5 ...

Page 7

AC Test Circuit Switch Output AC Waveform Output Enable ( OE , S1, S0) Output (A, B) Low to Off to Low Output (A, B) High to Off to High Open 2 × V 項 CC GND t pLZ Measure ...

Page 8

Rise and Fall Time (tr / tf) of the TC7MBL3253C I/O Signals The tr(out) and tf(out) values of the output signals are affected by the CR time constant of the input, which consists of the switch terminal capacitance (C I/O ...

Page 9

Package Dimensions Weight: 0.06 g (typ.) TC7MBL3253CFT/FK/FTG 9 2009-02-02 ...

Page 10

Package Dimensions Weight: 0.02 g (typ.) TC7MBL3253CFT/FK/FTG 10 2009-02-02 ...

Page 11

Package Dimensions Weight: 0.013 g (typ.) TC7MBL3253CFT/FK/FTG 11 2009-02-02 ...

Page 12

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

Related keywords