2SK2776_06 TOSHIBA [Toshiba Semiconductor], 2SK2776_06 Datasheet

2SK2776_06

Manufacturer Part Number

2SK2776_06

Description

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK2776_06.pdf (6 pages)

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

temperature

Characteristics

= 8 A

= 90 V, T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Pulse (Note 1)

DC (Note 1)

= 20 kΩ)

: V

DSS

= 25°C (initial), L = 8.3 mH, R

(Note 2)

= 2.0~4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK2776

| = 7.0 S (typ.)

= 10 V, I

= 0.75 Ω (typ.)

−55~150

= 500 V)

Rating

Max

1.92

83.3

500

±30

312

150

6.5

= 25 Ω,

= 1 mA)

°C / W

Unit

°C

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

2-10S1B

2-10S2B

2006-11-02

―

2SK2776

Unit: mm

Related parts for 2SK2776_06

2SK2776_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement mode : ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off ...

Page 3

3 2SK2776 2006-11-02 ...

Page 4

4 2SK2776 2006-11-02 ...

Page 5

Ω 8 2SK2776 1 ⎛ B ⎞ VDSS = ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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