2SK2823_07 TOSHIBA [Toshiba Semiconductor], 2SK2823_07 Datasheet - Page 2

• Manufacturer Part Number: 2SK2823_07
• Description: Silicon N Channel MOS Type For Portable Equipment
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Switching Time Test Circuit
(1)
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance 1
Drain-source ON resistance 2
Drain-source ON resistance 3
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Test circuit
Characteristics
Turn-on time
Turn-off time
(Ta = 25°C)
V
R
R
R
Symbol
DS (ON) 1
DS (ON) 2
DS (ON) 3
(BR) DSS
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
rss
iss
th
fs
⎪
V
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
= 100 μA, V
= 1 mA, V
= 10 mA, V
= 10 mA, V
= 20 V, V
= 1.5 V, I
= 1.5 V, I
= 1.5 V, V
= 1.5 V, V
= 1.5 V, V
= 10 V, V
= 1.5 V, I
= 0~1.5 V
2
Test Condition
(2)
(3)
GS
D
D
GS
GS
D
DS
GS
GS
GS
GS
GS
= 0.1 mA
= 10 mA
= 1.2 V
= 10 mA,
= 1.5 V
= 2.5 V
= 0
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
V
V
V
V
IN
GS
OUT
DS
Min
0.5
20
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.35
3.4
0.2
70
15
10
12
12
⎯
⎯
⎯
⎯
7
2007-11-01
2SK2823
Max
1.0
50
40
28
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
Unit
mS
μA
μA
pF
pF
pF
μs
Ω
Ω
Ω
V
V