2SK2845_06 TOSHIBA [Toshiba Semiconductor], 2SK2845_06 Datasheet
2SK2845_06
Manufacturer Part Number
2SK2845_06
Description
Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK2845_06.pdf
(6 pages)
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
temperature
Characteristic
Characteristic
DD
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII)
= 90 V, T
GS
Pulse (Note 1)
DC (Note 1)
= 20 kΩ)
ch
: I
: V
DSS
th
= 25°C (initial), L = 594 mH, R
(Note 2)
= 2.0~4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2845
fs
DS
| = 0.9 S (typ.)
= 10 V, I
DS
= 8.0 Ω (typ.)
= 720 V)
−55~150
Rating
3.125
Max
900
900
±30
324
150
125
D
4.0
40
1
3
1
1
G
= 1 mA)
= 25 Ω, I
°C / W
°C / W
AR
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
= 1 A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B5B
2-7B7B
SC-64
SC-64
2006-11-10
―
―
2SK2845
Unit: mm
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2SK2845_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII) Chopper Regulator, DC/DC Converter and Motor Drive Applications Low drain−source ON-resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement mode : V = ...
Page 2
Electrical Characteristics Characteristic Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time ...
Page 3
3 2SK2845 2006-11-10 ...
Page 4
4 2SK2845 2006-11-10 ...
Page 5
Ω 594 2SK2845 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...