451LP3E HITTITE [Hittite Microwave Corporation], 451LP3E Datasheet - Page 4

• Manufacturer Part Number: 451LP3E
• Description: GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

Absolute Maximum Ratings
Outline Drawing
Package Information
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Drain Bias Voltage (Vdd
rf input power (rfin)(Vdd = +5Vdc)
Channel Temperature
Continuous pdiss (T = 85 °C)
(derate 12.8 mw/°C above 85 °C)
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
HmC451lp3e
part number
HmC451lp3
Phone: [phone]
roHs-compliant low stress injection molded plastic
1
= Vdd
2
Application Support: Phone: [phone] or [e-mail]
low stress injection molded plastic
)
package Body material
+5.5V
+10 dBm
150 °C
0.83 w
78 °C/w
-65 to +150 °C
-40 to +85 °C
v00.0808
Fax: [phone]
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
Typical Supply Current vs. Vdd
note: Amplifier will operate over full voltage range shown above
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
solDereD To pCB rf GroUnD.
lAnD pATTern.
100% matte sn
sn/pb solder
lead finish
Order On-line at www.hittite.com
POWER AMPLIFIER, 5 - 18 GHz
HMC451LP3 / 451LP3E
GaAs PHEMT MMIC MEDIUM
Vdd
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
1
= Vdd
+4.5
+5.0
+5.5
2
(V)
msl rating
msl1
msl1
[1]
[2]
idd
package marking
1
+ idd
120
122
124
XXXX
XXXX
2
451
451
1
(mA)
= Vdd
[3]
2
9 - 4
9