ISPLSI2032VE-110LB49 LATTICE [Lattice Semiconductor], ISPLSI2032VE-110LB49 Datasheet - Page 10

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ISPLSI2032VE-110LB49

Manufacturer Part Number
ISPLSI2032VE-110LB49
Description
Manufacturer
LATTICE [Lattice Semiconductor]
Datasheet
Power consumption in the ispLSI 2032VE device de-
pends on two primary factors: the speed at which the
device is operating and the number of product terms
Figure 3. Typical Device Power Consumption vs fmax
Power Consumption
I CC can be estimated for the ispLSI 2032VE using the following equation:
For ispLSI 2032VE-225: I CC (mA) = 4.5 + (# of PTs * 1.29) + (# of nets * Max freq * 0.0068)
For ispLSI 2032VE-180 and slower: I CC (mA) = 4.5 + (# of PTs * 1.05) + (# of nets * Max freq * 0.0068)
Where:
The I CC estimate is based on typical conditions (V CC = 3.3V, room temperature) and an assumption of two
GLB loads on average exists. These values are for estimates only. Since the value of I CC is sensitive to
operating conditions and the program in the device, the actual I CC should be verified.
# of PTs = Number of product terms used in design
# of nets = Number of signals used in device
Max freq = Highest clock frequency to the device (in MHz)
150
125
100
75
50
25
0
25
50
Notes: Configuration of two 16-bit counters
Typical current at 3.3V, 25 C
75
100
f
10
max (MHz)
used. Figure 3 shows the relationship between power
and operating speed.
Specifications ispLSI 2032VE
125
150
ispLSI 2032VE-180
ispLSI 2032VE-225
and slower
175
200
225
0127A/2032VE

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