F25L004A-100PAG ESMT [Elite Semiconductor Memory Technology Inc.], F25L004A-100PAG Datasheet - Page 10
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F25L004A-100PAG
Manufacturer Part Number
F25L004A-100PAG
Description
3V Only 4 Mbit Serial Flash Memory
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.F25L004A-100PAG.pdf
(30 pages)
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Part Number
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Part Number:
F25L004A-100PAG
Manufacturer:
ESMT
Quantity:
20 000
ESMT
Byte-Program
The Byte-Program instruction programs the bits in the selected
byte to the desired data. The selected byte must be in the erased
state (FFH) when initiating a Program operation. A Byte-Program
instruction applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE must remain active low for
the duration of the Byte-Program instruction. The Byte-Program
Elite Semiconductor Memory Technology Inc.
Figure 4 : BYTE-PROGRAM SEQUENCE
SCK
SO
CE
SI
MODE0
MODE3
MSB
0 1 2 3 4 5 6 7 8
02
HIGH IMPENANCE
MSB
ADD.
15 16
instruction is initiated by executing an 8-bit command, 02H,
followed by address bits [A
is input in order from MSB (bit 7) to LSB (bit 0). CE must be
driven high before the instruction is executed. The user may poll
the Busy bit in the software status register or wait TBP for the
completion of the internal self-timed Byte-Program operation.
See Figure 4 for the Byte-Program sequence.
ADD.
23 24
ADD.
31 32
MSB
D
IN
LSB
Publication Date: Jan. 2009
Revision: 1.6
39
23
-A
0
]. Following the address, the data
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