AT42070 Agilent(Hewlett-Packard), AT42070 Datasheet
AT42070
Related parts for AT42070
AT42070 Summary of contents
Page 1
GHz Medium Power Silicon Bipolar Transistor Technical Data Features • High Output Power: 21.0 dBm Typical P at 2.0 GHz 1 dB 20.5 dBm Typical P at 4.0 GHz 1 dB • High Gain ...
Page 2
AT-42070 Absolute Maximum Ratings Symbol Parameter V Emitter-Base Voltage EBO V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO I Collector Current C [2,3] P Power Dissipation T T Junction Temperature j T Storage Temperature STG Electrical Specifications, T Symbol Parameters ...
Page 3
AT-42070 Typical Performance 1.0 GHz 16 2.0 GHz 12 8 4.0 GHz (mA) C Figure 1. Insertion Power Gain vs. Collector Current and Frequency ...
Page 4
AT-42070 Typical Scattering Parameters, Common Emitter Freq GHz Mag. Ang. 0.1 .70 -49 28.5 0.5 .69 -137 21.5 1.0 .69 -165 16.0 1.5 .68 -179 12.7 2.0 ...
Page 5
Package Dimensions .040 1.02 4 EMITTER BASE COLLECTOR 1 3 Notes: (unless otherwise specified) 2 EMITTER 1. Dimensions are in 2. Tolerances in .xxx = mm .xx = .070 .004 .002 1.70 .10 .05 .495 .030 .035 12.57 ...