AT42070 Agilent(Hewlett-Packard), AT42070 Datasheet - Page 2

• Manufacturer Part Number: AT42070
• Description: Up to 6 GHz Medium Power Silicon Bipolar Transistor
• Manufacturer: Agilent(Hewlett-Packard)

AT-42070 Absolute Maximum Ratings
Electrical Specifications, T
Note:
1. For this test, the emitter is grounded.
Symbol
|S
P
G
NF
G
f
h
I
I
C
Symbol
CBO
EBO
T
1 dB
FE
CB
1 dB
A
21E
V
V
V
T
O
P
EBO
CBO
CEO
I
T
STG
|
C
T
j
2
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
O
C
; V
= 35 mA
Parameters and Test Conditions
CE
= 8 V, I
[2,3]
CE
C
A
CE
CE
EB
= 10 mA
= 8 V, I
= 25 C
CE
CB
[1]
= 8 V, I
= 8 V, I
= 1 V
: V
= 8 V, I
= 8 V
CB
C
CE
= 8 V, f = 1 MHz
C
Units
= 35 mA
C
mW
mA
= 35 mA
= 10 mA
= 8 V, I
C
V
V
V
C
C
= 35 mA
4-165
C
Maximum
= 35 mA
Absolute
-65 to 200
600
200
[1]
1.5
20
12
80
f = 2.0 GHz
[1]
f = 2.0 GHz
f = 4.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 6.7 mW/ C for T
4. The small spot size of this tech-
any of these limits are exceeded.
nique results in a higher, though
more accurate determination of
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
CASE
Thermal Resistance
Units Min.
dBm
GHz
dB
dB
dB
dB
pF
—
= 25 C.
A
A
jc
= 150 C/W
10.5
30
Typ. Max.
11.5
21.0
20.5
15.0
10.0
14.0
10.5
0.28
150
5.5
1.9
3.0
8.0
C
> 110 C.
[2,4]
270
0.2
2.0
:
jc