ADG511 Analog Devices, ADG511 Datasheet - Page 2

• Manufacturer Part Number: ADG511
• Description: LC2MOS Precision 5 V/3 V Quad SPST Switches
• Manufacturer: Analog Devices

ADG511/ADG512/ADG513–SPECIFICATIONS
Dual Supply
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Versions –40 C to +85 C; T Versions –55 C to +125 C.
Guaranteed by design, not subject to production test.
Analog Signal Range
R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time
Delay, t
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
C
C
V
V
I
I
ON
OFF
DD
SS
ON
DD
SS
S
D
D
I
INL
, C
(OFF)
(OFF)
S
or I
(ON)
D
(ADG513 Only)
INH
(V
DD
D
INL
INH
S
= +5 V
D
(OFF)
(OFF)
, I
S
(ON)
2
10%, V
+25 C
30
0.005
200
120
100
11
68
85
9
9
35
0.0001
0.0001
0.025
0.1
0.025
0.1
0.05
0.2
SS
B Versions
= –5 V
–40 C to
+85 C
V
50
2.4
0.8
375
150
+4.5/5.5
–4.5/–5.5
1
1
DD
2.5
2.5
5
0.1
10%, GND = 0 V, unless otherwise noted)
to V
SS
+25 C
30
0.005
200
120
100
11
68
85
9
9
35
0.0001
0.0001
–2–
0.025
0.1
0.025
0.1
0.05
0.2
T Versions
–55 C to
+125 C
V
50
2.4
0.8
375
150
+4.5/5.5
–4.5/–5.5
1
1
2.5
2.5
5
0.1
DD
to V
SS
1
Units
V
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
ns typ
ns max
ns typ
ns max
ns typ
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
V min/max
V min/max
A typ
A max
A typ
A max
A typ
A max
typ
max
Test Conditions/Comments
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
V
Test Circuit 6
R
Test Circuit 7
R
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5 V
D
DD
DD
D
D
D
IN
L
S
L
S
L
S1
S
L
L
DD
= 3 V; Test Circuit 4
= 3 V; Test Circuit 4
= 0 V, R
= 300 . C
= 300 . C
= 300 , C
= 50 , C
= 50 , C
= 3.5 V, I
= 4.5 V, V
= 4.5 V, V
= V
= V
= V
= +4.5 V, V
= +5.5 V, V
= +5.5 V, V
S
S2
INL
= 4.5 V;
= +3 V; Test Circuit 5
or V
S
= 0 , C
L
L
S
L
L
L
= 5 pF, f = 1 MHz;
= 5 pF, f = 1 MHz;
S
S
INH
= –10 mA;
= 35 pF;
= 35 pF;
= 35 pF;
SS
SS
SS
=
=
= –4.5 V
= –5.5 V
= –5.5 V
4.5 V;
4.5 V;
L
= 10 nF;
REV. B