NAND128-A STMicroelectronics, NAND128-A Datasheet - Page 33

no-image

NAND128-A

Manufacturer Part Number
NAND128-A
Description
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
Manufacturer
STMicroelectronics
Datasheet
Table 18. DC Characteristics, 1.8V Devices
Symbol
I
OL
V
I
I
I
I
V
V
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
512Mb and 1Gb Dual Die devices
128Mb, 256Mb, 512Mb devices
V
DD
Stand-By Current (CMOS)
Stand-By Current (CMOS)
Output High Voltage Level
Output Low Voltage Level
Operating
Output Low Current (RB)
Output Leakage Current
Current
Input Leakage Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
V
E=V
V
Test Conditions
OUT
IN
t
RLRL
I
I
OH
E=V
= 0 to V
WP=0/V
OL
V
IL,
= 0 to V
OL
I
= -100µA
= 100µA
OUT
minimum
DD
= 0.1V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
V
V
DD
DD
Min
-0.3
3
-
-
-
-
-
-
-
-
-
-0.4
-0.1
Typ
10
20
8
8
8
4
-
-
-
-
-
-
-
V
DD
Max
100
±10
±10
0.4
0.1
1.5
15
15
15
50
-
+0.3
Unit
33/55
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V

Related parts for NAND128-A