NAND128-A STMicroelectronics, NAND128-A Datasheet - Page 54

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NAND128-A

Manufacturer Part Number
NAND128-A
Description
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
Manufacturer
STMicroelectronics
Datasheet
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
RELATED DOCUMENTATION
STMicroelectronics has published a set of application notes to support the NAND Flash memories. They
are available from the ST Website www.st.com . or from your local ST Distributor.
REVISION HISTORY
Table 29. Document Revision History
54/55
06-Jun-2003
07-Aug-2003
27-Oct-2003
03-Dec-2003
13-Apr-2004
28-May-2004
02-Jul-2004
01-Oct-2004
03-Dec-2004
13-Dec-2004
Date
Version
10.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
First Issue
Design Phase
Engineering Phase
Document promoted from Target Specification to Preliminary Data status.
V
Title of
for NANDXXXR3A devices corrected.
WSOP48 and VFBGA55 packages added, VFBGA63 (9 x 11 x 1mm) removed.
Figure 19., Cache Program
for t
Meaning of t
modified in
References removed from
made to ST Website instead.
Figure
paragraph clarified and
modified. Note 2 to
Note 3 to
operations are valid before a Cache Program operation. I
18., DC Characteristics, 1.8V
Waveform. Small text changes.
TFBGA55 package added (mechanical data to be announced). 512Mb Dual Die
devices added.
Package code changed for TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch
(1Gbit Dual Die devices) in
Cache Program removed from document. TFBGA55 package specifications added
(Figure 40., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch, Package
Outline
Package Mechanical
Test conditions modified for V
Characteristics, 3V
Third part number corrected in
added to
modified. Definition of a Bad Block modified in
RoHS COMPLIANCE
Diagram
Document promoted from Preliminary Data to Full Datasheet status.
Automatic Page 0 Read at Power-Up option no longer available.
PC Demo board with simulation software removed from list of available development
tools.
R
Description of the family clarified in the
CC
ref
WLWH
changed to V
parameter added to
Chip Enable (E)
6.,
Table
and
modified.
Table 10., Copy Back Program
timing in
Figure
Table 21., AC Characteristics for
Table 7., Address Insertion, x16 Devices
BLBH4
Table 25., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch,
2.. changed to
Figure 19., Cache Program Operation
7.,
DD
modified, partly replaced by t
Table 20., AC Characteristics for Command, Address, Data
Figure 30., Read C Operation, One Page AC
Devices.
and I
Figure 29.
Data).
paragraph clarified.
added to
CC
Figure 28., Read Electronic Signature AC
Table 16., Operating and AC Measurement
Table 28., Ordering Information
Operation, modified and note 2 modified. Note removed
“Product
RELATED DOCUMENTATION
to I
Devices. Note added to
Table 1., Product
DD
and
Revision Details
FEATURES
.
OL
Figure 32.
Table 1., Product
Description” and Page Program Typical Timing
SUMMARY DESCRIPTION
and V
Addresses.
Operations.
OH
WHBH1
SUMMARY.
modified.
Bad Block Management
List. 512 Mbit Dual Die information
parameters in
Block Erase
modified.
and t
List, inserted on page 2.
removed. Only 00h Pointer
Figure 32., Block Erase AC
Read Electronic Signature
Scheme.
DD4
WHRL
Figure 3., Logic Block
section and reference
Waveform, removed.
removed from
min for 3V devices
last address cycle
section.
Table 19., DC
Conditions.
Waveform,
paragraph.
Input.
Table

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