TC58FVM7B2 Toshiba Semiconductor, TC58FVM7B2 Datasheet - Page 18

• Manufacturer Part Number: TC58FVM7B2
• Description: 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
• Manufacturer: Toshiba Semiconductor

HARDWARE SEQUENCE FLAGS
an auto mode operation. The output data is read out using the same timing as that used when CE
Read Mode. The
Hardware Sequence flag is read to determine the device status and the result of the operation is verified by
comparing the read-out data with the original data.
The TC58FVM7T2A/B2A has a Hardware Sequence flag which allows the device status to be determined during
The device re-enters Read Mode automatically after an auto mode operation has been completed successfully. The
Notes:DQ outputs cell data and
DQ7 (
function. DATA polling begins on the rising edge of WE in the last bus cycle. In an Auto-Program operation,
DQ7 outputs inverted data during the programming operation and outputs actual data after programming has
finished. In an auto-erase operation, DQ7 outputs 0 during the Erase operation and outputs 1 when the Erase
operation has finished. If an Auto-Program or auto-erase operation fails, DQ7 simply outputs the data.
signal.
In Progress
Time Limit
Exceeded
During an Auto-Program or auto-erase operation, the device status can be determined using the data polling
When the operation has finished, the address latch is reset. Data polling is asynchronous with the OE
DQ0 and DQ1 pins are reserved for future use.
0 is output on DQ0, DQ1 and DQ4.
(1) Data output from an address to which Write is being performed is undefined.
(2) Output when the block address selected for Auto Block Erase is specified and data is read from there.
(3) Output when a block address not selected for Auto Block Erase of same bank as selected block is specified and data is
(4) In case of Page program operation is program data of (A0,A1,A2)=(1,1,1) in eleventh bus write cycle in word mode.
DATA
During Auto Chip Erase, all blocks are selected.
read from there.
Program data of (A-1,A0,A1,A2)=(1,1,1,1) in nineteenth bus write cycle in byte mode.
Auto Programming / Auto Page Programming
Read in Program Suspend
Auto Programming / Auto Page Programming
Auto Erase
Programming in Erase Suspend
Suspend
In Erase
In Auto
RY
Erase
polling)
/
BY
STATUS
Erase Hold Time
output can be either High or Low.
Programming
Auto Erase
Read
RY
/
BY
goes High-Impedence when the operation has been completed.
(1)
Not-selected
Not-selected
Not-selected
Not-selected
Selected
Selected
Selected
Selected
(2)
(3)
DQ (4)
DQ
Data
Data
DQ
DQ
DQ
DQ7
0
0
0
0
1
0
7
7
7
7
7
(4)
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ6
Data
Data
1
TC58FVM7(T/B)2AFT(65/80)
DQ5
Data
Data
0
0
0
0
0
0
0
0
1
1
1
DQ3
Data
Data
0
0
0
1
1
0
0
0
0
1
0
2002-10-24 18/68
Toggle
Toggle
Toggle
Toggle
Data
Data
DQ2
NA
NA
1
1
1
1
1
OE
RY
High-Z
High-Z
High-Z
V
0
0
0
0
0
0
0
0
0
0
/
BY
IL
in