TC58FVM7B2 Toshiba Semiconductor, TC58FVM7B2 Datasheet - Page 20

• Manufacturer Part Number: TC58FVM7B2
• Description: 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
• Manufacturer: Toshiba Semiconductor

DATA PROTECTION
The TC58FVM7T2A/B2A includes a function which guards against malfunction or data corruption.
Protection against Program/Erase Caused by Low Supply Voltage
V
this case, Auto operation is not executed again when V
command need to be input to execute Auto operation again.
When V
Protection against Malfunction Caused by Glitches
shorter than 3 ns (Typ.) input on WE , CE or OE . However, if a glitch exceeding 3 ns (Typ.) occurs and the
glitch is input to the device malfunction may occur.
misinterpreted as part of a command sequence input and that the device will acknowledge it. Then, even if a
proper command is input, the device may not operate. To avoid this possibility, clear the Command Register
before command input. In an environment prone to system noise, Toshiba recommend input of a software or
hardware reset before command input.
Protection against Malfunction at Power-on
V
automatically Resets the Command Register and enters Read Mode.
LKO
IL
To prevent malfunction at power-on or power-down, the device will not accept commands while V
If V
To prevent malfunction during operation caused by noise from the system, the device will not accept pulses
The device uses standard JEDEC commands. It is conceivable that, in extreme cases, system noise may be
To prevent damage to data caused by sudden noise at power-on, when power is turned on with WE
the device does not latch the command on the first rising edge of WE or CE . Instead, the device
. In this state, command input is ignored.
DD
DD
drops below V
V
LKO
, make up countermeasure to be input accurately command in system side please.
LKO
during an Auto Operation, the device will terminate Auto-Program execution. In
DD
return to recommended V
TC58FVM7(T/B)2AFT(65/80)
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DD
voltage Therefore,
DD
is below
CE