EL7563C Elantec Semiconductor, EL7563C Datasheet - Page 2

• Manufacturer Part Number: EL7563C
• Description: Monolithic 4 Amp DC:DC Step-down Regulator
• Manufacturer: Elantec Semiconductor

EL7563C
Monolithic 4 Amp DC:DC Step-down Regulator
Absolute Maximum Ratings
Supply Voltage between V
V
Input Voltage
V
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T
DC Characteristics
V
V
V
V
V
I
I
I
I
V
V
T
T
I
I
R
R
I
I
V
V
V
V
V
V
V
V
V
I
V
V
I
LX
HI
DD
OSC_CHG
OSC_DIS
VDD
VDD_OFF
LEAK
LMAX
STP
STN
FB
EN
Parameter
OT
HYS
DSON
DSONTC
REF
REFTC
REFLOAD
RAMP
DD_OFF
DD_ON
PGP
PGN
PG_HI
PG_LO
OVP
FB
FB_LINE
FB_LOAD
FB_TC
EN_HI
EN_LO
Voltage
Voltage
= V
+V
IN
DRV
= 3.3V, T
Reference Accuracy
Reference Temperature Coefficient
Reference Load Regulation
Oscillator Ramp Amplitude
Oscillator Charge Current
Oscillator Discharge Current
V
V
V
V
Over Temperature Threshold
Over Temperature Hysteresis
Internal FET Leakage Current
Peak Current Limit
FET On Resistance
R
Auxilliary Supply Tracking Positive Input Pull
Down Current
Auxilliary Supply Tracking Negative Input Pull
Up Current
Positive Power Good Threshold
Negative Power Good Threshold
Power Good Drive High
Power Good Drive Low
Over Voltage Protection
Output Initial Accuracy
Output Line Regulation
Output Load Regulation
Output Temperature Stability
Feedback Input Pull Up Current
EN Input High Level
EN Input Low Level
Enable Pull Up Current
DSON
DD
DD
DD
DD
+V
A
Standby Current
for Shutdown
for Startup
= T
Tempco
DRV
IN
J
= 25
Supply Current
or V
°
DD
C, C
Description
and GND
OSC
= 1.2nF, unless otherwise specified.
GND -0.3V, V
GND -0.3V, V
(T
A
J
= 25°C)
= T
C
= T
V
0<I
0.1V<V
0.1V<V
V
EN = 0
EN = 0, L
(high FET)
Wafer level test only
V
V
With respect to target output voltage
With respect to target output voltage
I
I
I
V
0.5A< I
-40°C < T
V
V
DD
PG
PG
LOAD
IN
EN
STP
STN
IN
FB
EN
A
LX
REF
= 1mA
+4.5V
+0.3V
+0.3V
.
= -1mA
= 3.3V, V
= 0V
= 4V, F
= 0
= V
+6V
= V
= 0A
<50µA
LOAD
OSC
OSC
IN
X
IN
A
<85°C, I
/2
<1.25V
<1.25V
= 3.3V (low FET), L
/2
OSC
2
<4A
IN
Conditions
= 120kHz
Storage Temperature
Operating Ambient Temperature
Operating Junction Temperature
= 10%, I
LOAD
= 2A
LOAD
X
= 0A
= 0V
0.977
Min
1.24
2.4
2.6
-16
2.7
-1
-4
-4
2
5
8
1
0.992
Typ
1.26
1.15
200
135
100
-2.5
3.5
0.2
2.5
2.5
0.5
0.5
50
20
30
10
±1
8
1
1.007
Max
1.28
2.65
2.95
200
1.5
0.5
2.7
10
60
16
-8
5
4
-65°C to +150°C
-40°C to +85°C
ppm/°C
m /°C
Unit
mA
mA
mA
m
+135°C
µA
µA
µA
µA
nA
µA
°C
°C
%
%
%
%
%
%
%
V
V
V
V
A
V
V
V
V
V