HCS14MS Intersil Corporation, HCS14MS Datasheet

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HCS14MS

Manufacturer Part Number
HCS14MS
Description
Radiation Hardened HEX Inverting Schmitt Trigger
Manufacturer
Intersil Corporation
Datasheet
September1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Cosmic Ray Upset Immunity < 2 x 10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS154MS is a Radiation Hardened 4 to 16 line
Decoder/Demultiplexer with two enable inputs. A high on
either enable input forces the output to a high state. The
Demultiplexing function is performed by using the four input
lines A0 to A3 to select the desired output states.
The HCS154MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS154MS is supplied in a 24 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS154DMSR
HCS154KMSR
HCS154D/Sample
HCS154K/Sample
HCS154HMSR
Bit-Day (Typ)
(Typ)
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
PART NUMBER
10
RAD(Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
-55
-55
Rads (Si)/s
-9
o
o
C to +125
C to +125
+25
+25
+25
Errors/Gate Day
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
1
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
Y10
ND
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
4-to-16 Line Decoder/Demultiplexer
SCREENING LEVEL
HCS154MS
FLATPACK PACKAGE (FLATPACK)
24 LEAD CERAMIC DUAL-IN-LINE
24 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
Y10
MIL-STD-1835 CDFP4-F24
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
MIL-STD-1835 CDIP2-T24
1
2
3
4
5
6
7
8
9
10
11
12
10
11
12
1
2
3
4
5
6
7
8
9
TOP VIEW
TOP VIEW
Radiation Hardened
24 Lead SBDIP
24 Lead Ceramic Flatpack
24 Lead SBDIP
24 Lead Ceramic Flatpack
Die
24
23
22
21
20
19
18
17
16
15
14
13
Spec Number
24
23
22
21
20
19
18
17
16
15
14
13
File Number
PACKAGE
VCC
A0
A1
A2
A3
E2
E1
Y15
Y14
Y13
Y12
Y11
518754
2479.2
A0
A1
A2
A3
E2
E1
Y15
Y14
Y13
Y12
Y11
VCC

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HCS14MS Summary of contents

Page 1

... SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCS154DMSR HCS154KMSR HCS154D/Sample HCS154K/Sample HCS154HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCS154MS 4-to-16 Line Decoder/Demultiplexer Pinouts 2 /mg -9 Errors/ 12 Rads (Si)/s ...

Page 2

Functional Diagram INPUTS ...

Page 3

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Address to Output TPLH VCC = 4.5V TPHL VCC = 4.5V Enable to Output TPLH VCC = 4.5V TPHL NOTES: 1. All voltages referenced to device GND measurements assume RL ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETERS SYMBOL Output Voltage High VOH VCC = 4.5V or 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50 A Input Leakage Current IIN VCC = 5.5V, VIN = VCC ...

Page 6

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note 11, 13 ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

Page 9

Die Characteristics DIE DIMENSIONS 101 mils 2.16 x 2.57mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY 2 A/cm BOND ...

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