ISPLSI2064VL-100LB100 Lattice Semiconductor, ISPLSI2064VL-100LB100 Datasheet - Page 3

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ISPLSI2064VL-100LB100

Manufacturer Part Number
ISPLSI2064VL-100LB100
Description
2.5V In-System Programmable SuperFAST High Density PLD
Manufacturer
Lattice Semiconductor
Datasheet
Supply Voltage V
Input Voltage Applied ................................... -0.5 to +4.05V
Off-State Output Voltage Applied ................ -0.5 to +4.05V
Storage Temperature ..................................... -65 to 150 C
Case Temp. with Power Applied .................... -55 to 125 C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
C
C
C
Erase Reprogram Specifications
Absolute Maximum Ratings
DC Recommended Operating Condition
V
V
V
Capacitance (TA=25 C, f=1.0 MHz)
Erase/Reprogram Cycles
1
2
3
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
CC
IL
IH
SYMBOL
SYMBOL
Dedicated Input Capacitance
I/O Capacitance
Clock and Global Output Enable Capacitance
cc .................................................
PARAMETER
Supply Voltage
Input Low Voltage
Input High Voltage
J
) with Power Applied ............ 150 C
PARAMETER
1
-0.5 to +4.05V
PARAMETER
Commercial
Industrial
MINIMUM
3
10,000
Specifications ispLSI 2064VL
T
T
A
A
= 0 C to + 70 C
= -40 C to + 85 C
TYPICAL
10
8
6
MAXIMUM
UNITS
pf
pf
pf
MIN.
-0.3
2.3
2.3
1.7
V = 2.5V, V = 0.0V
V = 2.5V, V = 0.0V
V = 2.5V, V = 0.0V
CC
CC
CC
TEST CONDITIONS
MAX.
2.7
2.7
0.7
3.6
UNITS
Cycles
Table 2-0006/2064VL
IN
I/O
Table 2-0005/2064VL
Table 2-0008/2064VL
Y
UNITS
V
V
V
V

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