BS62LV256 Brilliance Semiconductor, BS62LV256 Datasheet - Page 2
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BS62LV256
Manufacturer Part Number
BS62LV256
Description
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
1.BS62LV256.pdf
(11 pages)
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R0201-BS62LV256
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
A0-A14 Address Input
CE Chip Enable Input
WE Write Enable Input
OE Output Enable Input
DQ0 – DQ7 Data Input/Output
Ports
Vcc
Gnd
Output Disabled
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
PIN DESCRIPTIONS
SYMBOL
Not selected
V
T
T
P
I
OUT
BIAS
STG
TERM
T
MODE
Read
Write
BSI
Terminal
Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Name
PARAMETER
Voltage
WE
H
H
X
L
with
CE
-40 to +125
-60 to +150
H
RATING
L
L
L
Vcc+0.5
These 15 address inputs select one of the 32768 x 8-bit words in the RAM
CE is active LOW. Chip enables must be active when data read from or write to the
device. If chip enable is not active, the device is deselected and is in a standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
These 8 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
-0.5 to
(1)
1.0
20
OE
UNITS
X
H
X
L
mA
O
O
W
V
C
C
2
1. This parameter is guaranteed and not tested.
OPERATING RANGE
CAPACITANCE
SYMBOL
I/O OPERATION
C
Commercial
C
DQ
RANGE
Industrial
IN
Function
High Z
High Z
D
D
OUT
IN
Input
Capacitance
Input/Output
Capacitance
PARAMETER
TEMPERATURE
(1)
-40
0
O
(TA = 25
AMBIENT
O
C to +70
C to +85
CONDITIONS
V
BS62LV256
V
I/O
IN
O
=0V
o
=0V
O
Vcc CURRENT
C
C, f = 1.0 MHz)
C
I
CCSB
I
I
I
, I
CC
CC
CC
2.4V ~ 5.5V
2.4V ~ 5.5V
MAX.
CCSB1
Revision 2.2
April 2001
6
8
Vcc
UNIT
pF
pF