M36L0R8060 ST Microelectronics, M36L0R8060 Datasheet - Page 13

• Manufacturer Part Number: M36L0R8060
• Description: 256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
• Manufacturer: ST Microelectronics

Table 6. Flash Memory DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
Symbol
I
DD6
I
I
I
I
DD5
DD7
PP1
PP3
I
I
I
I
I
I
DD1
DD2
DD3
DD4
PP2
I
LO
LI
2. V
3. The total standby current should be calculates as the sum of the Flash memory standby current plus the PSRAM standby current.
(1,2)
(1)
(1)
(1)
(1)
DDF
Input Leakage Current
Output Leakage Current
Supply Current
Asynchronous Read (f=5MHz)
Supply Current
Synchronous Read (f=54MHz)
Supply Current
(Reset)
Supply Current (Standby)
Supply Current (Automatic Standby)
Supply Current (Program)
Supply Current (Erase)
Supply Current
(Dual Operations)
Supply Current Program/ Erase
Suspended (Standby)
V
V
V
V
Dual Operation current is the sum of read and program or erase currents.
PPF
PPF
PPF
PPF
Supply Current (Program)
Supply Current (Erase)
Supply Current (Read)
Supply Current (Standby)
Parameter
Synchronous Read (Continuous
Asynchronous Read in another
Program/Erase in one Bank,
Program/Erase in one Bank,
f=54MHz) in another Bank
0V
E
E
RP
E
E
0V
Test Condition
F
F
F
F
V
V
V
V
V
V
V
V
V
V
= V
= V
Continuous
F
= V
= V
PPF
PPF
PPF
PPF
PPF
PPF
PPF
PPF
PPF
PPF
16 Word
V
= V
4 Word
8 Word
V
Bank
OUT
IL
IL
DDF
DDF
IN
, G
, G
= V
= V
= V
= V
= V
= V
= V
= V
SS
V
V
F
F
± 0.2V
± 0.2V
± 0.2V
PPH
DDF
PPH
DDF
PPH
DDF
PPH
DDF
DDF
DDF
V
V
= V
= V
DDQ
DDQ
M36L0R8060T0, M36L0R8060B0
IH
IH
Typ
0.2
0.2
0.2
0.2
13
16
18
23
25
50
50
50
10
10
23
35
50
8
8
2
2
Max
110
110
110
110
±1
±1
15
18
20
25
27
15
20
15
20
35
47
5
5
5
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
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