K4S641632E Samsung semiconductor, K4S641632E Datasheet - Page 6

no-image

K4S641632E

Manufacturer Part Number
K4S641632E
Description
64Mbit SDRAM
Manufacturer
Samsung semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K4S641632E-TC1H
Manufacturer:
SAMSUNG
Quantity:
5
Part Number:
K4S641632E-TC1L
Manufacturer:
SAMSUNG
Quantity:
13
Part Number:
K4S641632E-TC75
Manufacturer:
SAMSUNG
Quantity:
21
Part Number:
K4S641632E-TC75
Manufacturer:
SAMSUNG
Quantity:
9 600
Part Number:
K4S641632E-TI75
Manufacturer:
SAM
Quantity:
2 100
Part Number:
K4S641632E-TL1L
Manufacturer:
SEC
Quantity:
1 097
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Notes :
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to active delay
Last data in to new col. address Delay
Last data in to burst stop
Col. address to col. address delay
Number of valid output
data
AC OPERATING TEST CONDITIONS
K4S641632E
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Notes :
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
and then rounding off to the next higher integer.
1. The DC/AC Test Output Load of K4S641632E-50/55/60 is 30pF.
2. The VDD condition of K4S641632E-50/55/60 is 3.135V~3.6V.
(Fig. 1) DC output load circuit
Parameter
Output
Parameter
870
CAS latency=3
CAS latency=2
3.3V
t
t
t
t
t
t
t
t
t
t
t
1200
50pF
RRD
RCD
RP
RAS
RAS
RC
RDL
DAL
CDL
BDL
CCD
Symbol
(min)
(min)
(min)
(min)
(min)
(min)
(min)
(max)
(min)
(min)
(min)
V
V
OH
OL
(DC) = 0.4V, I
(DC) = 2.4V, I
(V
+15ns
2CLK
38.5
DD
-50
10
15
15
55
= 3.3V
OL
OH
+16.5ns
2CLK
= 2mA
16.5
16.5
38.5
= -2mA
-55
11
55
0.3V, T
-
A
+18ns
2CLK
= 0 to 70 C)
-60
12
18
18
42
60
See Fig. 2
tr/tf = 1/1
2.4/0.4
Value
1.4
1.4
Version
100
+20ns
2CLK
2
1
1
1
2
-70
14
20
20
49
68
Output
(Fig. 2) AC output load circuit
+20ns
2CLK
-75
15
20
20
45
65
Rev.0.2 Sept. 2001
+20ns
2CLK
Z0 = 50
-1H
20
20
20
50
70
1
CMOS SDRAM
+20ns
2CLK
-1L
20
20
20
50
70
Unit
Vtt = 1.4V
ns
V
V
V
50
50pF
Unit
CLK
CLK
CLK
CLK
ns
ns
ns
ns
us
ns
ea
-
Note
2,5
1
1
1
1
1
5
2
2
3
4

Related parts for K4S641632E