K4S56163PF-F1L Samsung semiconductor, K4S56163PF-F1L Datasheet - Page 5

• Manufacturer Part Number: K4S56163PF-F1L
• Description: 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
• Manufacturer: Samsung semiconductor

DC CHARACTERISTICS
K4S56163PF - R(B)G/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC
CC
CC
PS CKE & CLK ≤ V
NS
PS CKE & CLK ≤ V
NS
4
5
6
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
ARFC
RC
O
CCD
O
= 0 mA
= 0 mA
≥ t
= 2CLKs
≥ t
RC
ARFC
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
(min)
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
5
= ∞
= ∞
A
= -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
1/2 of Full Array
1/4 of Full Array
Internal TCSR
CC
CC
CC
CC
Full Array
= 10ns
= 10ns
= ∞
= ∞
-75
Max 40
50
75
85
200
160
140
Version
Mobile-SDRAM
-90
0.3
0.3
45
10
20
60
85
1
5
1
5
Max 70/85
450
300
250
-1L
40
60
85
September 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
°C
uA
Note
1
1
2