K4S56163PF-F1L Samsung semiconductor, K4S56163PF-F1L Datasheet - Page 6
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K4S56163PF-F1L
Manufacturer Part Number
K4S56163PF-F1L
Description
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Manufacturer
Samsung semiconductor
Datasheet
1.K4S56163PF-F1L.pdf
(12 pages)
K4S56163PF - R(B)G/F
AC OPERATING TEST CONDITIONS
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Figure 1. DC Output Load Circuit
10.6KΩ
Parameter
1.8V
13.9KΩ
20pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
(V
DD
= 1.7V ∼ 1.95V, T
0.9 x V
6
Output
See Figure 2
0.5 x V
0.5 x V
tr/tf = 1/1
Value
A
DDQ
Figure 2. AC Output Load Circuit
= -25 ~ 85°C for Extended, -25 ~ 70°C for Commercial)
DDQ
DDQ
/ 0.2
Z0=50Ω
Mobile-SDRAM
Vtt=0.5 x VDDQ
50Ω
September 2004
20pF
Unit
ns
V
V
V