K9F1208Q0B Samsung semiconductor, K9F1208Q0B Datasheet - Page 12
K9F1208Q0B
Manufacturer Part Number
K9F1208Q0B
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
1.K9F1208Q0B.pdf
(45 pages)
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K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
Figure 3. Memory Array Map
Memory Map
The device is arranged in four 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte(X8 device) or 264 word(X16
device) page registers. This allows it to perform simultaneous page program and block erase by selecting one page or block from
each plane. The block address map is configured so that multi-plane program/erase operations can be executed for every four
sequential blocks.
528byte Page Registers
Block 4092
Block 4088
Block 0
Block 4
Plane 0
(1024 Block)
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Page 0
Page 1
Page 0
Page 1
Page 0
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Page 0
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528byte Page Registers
Block 4093
Block 4089
Block 1
Block 5
Plane 1
(1024 Block)
Page 30
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Page 30
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Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
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528byte Page Registers
Plane 2
(1024 Block)
Block 4094
Block 4090
Block 2
Block 6
Page 30
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Page 31
Page 30
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Page 31
Page 31
Page 31
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
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FLASH MEMORY
528byte Page Registers
Block 4095
Plane 3
(1024 Block)
Block 4091
Block 3
Block 7
Page 30
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Page 0
Page 1
Page 0
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