K9F1208Q0B Samsung semiconductor, K9F1208Q0B Datasheet - Page 33

• Manufacturer Part Number: K9F1208Q0B
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
NOTE: 1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
Figure 7. Read1 Operation
CLE
CE
WE
ALE
R/B
RE
I/O
0
~
7
array (00h) at next cycle.
00h
X16 device : A
X8 device : A
Start Add.(4Cycle)
0
0
~ A
~ A
7
7
& A
& A
01h command is only available on X8 device(K9F1208X0A).
9
9
~ A
~ A
25
25
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
(00h Command)
Data Field
Main array
t
R
32
On K9F1208U0A-Y,P or K9F1208U0A-V,F
CE must be held low during tR
Spare Field
1)
Data Output(Sequential)
1st half array
FLASH MEMORY
(01h Command)
Data Field
2st half array
Spare Field