M470L6423EN Samsung semiconductor, M470L6423EN Datasheet
M470L6423EN
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M470L6423EN Summary of contents
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Unbuffered SODIMM(based on sTSOP) DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 256Mb E-die (x8) with 64-bit Non ECC Revision 1.3 March. 2004 DDR SDRAM Rev. 1.3 March. 2004 ...
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Unbuffered SODIMM(based on sTSOP) Revision History Revision 1.0 (May, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. Revision 1.2 (December, 2003) - Corrected typo. Revision 1.3 (March, 2004) - Corrected package dimension. DDR SDRAM Rev. 1.3 ...
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... Unbuffered SODIMM(based on sTSOP) 200Pin Unbuffered SODIMM based on 256Mb E-die (x8) Ordering Information Part Number M470L6423EN0-C(L)B3/A2/B0 Operating Frequencies Speed @CL2 Speed @CL2.5 CL-tRCD-tRP Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • ...
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... DQS4 Note These pins are not used in this module. 2. Pins 71, 72, 73, 74, 77, 78, 79, 80, 83, 84 are reserved for x72 module, and are not used on x64 module. Pin 95,122 are NC for 8Mx16 based module & used for 16Mx8 based module. 3. Pins 89, 91 are reserved for x72 modules. ...
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Unbuffered SODIMM(based on sTSOP) FUNCTIONAL BLOCK DIAGRAM CS0 DQS0 DM0 DM DQ0 I/O 7 DQ1 I/O 6 DQ2 I/O 1 DQ3 I/O 0 DQ4 I/O 5 I/O 4 DQ5 I/O 3 DQ6 DQ7 I/O 2 DQS1 DM1 DM I/O ...
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Unbuffered SODIMM(based on sTSOP) Absolute Maximum Ratings Parameter Voltage on any pin relative to V Voltage on V & V supply relative DDQ Storage temperature Power dissipation Short circuit current Note : Permanent device damage may ...
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... Unbuffered SODIMM(based on sTSOP) DDR SDRAM IDD spec table M470L6423EN0 [ (32M 512MB Non ECC Module ] Symbol B3(DDR333@CL=2.5) IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. ...
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... Max Min Min VREF + 0.31 VREF + 0.31 VREF - 0.31 VREF - 0.31 0.7 0.7 VDDQ+0.6 VDDQ+0.6 0.5*VDDQ-0.2 0.5*VDDQ-0.2 0.5*VDDQ+0.2 0.5*VDDQ+0.2 DDQ R =50Ω REF =0.5*V DDQ (VDD=2.5V, VDDQ=2.5V, TA= 25°C, f=1MHz) M470L6423EN0 Min Max Rev. 1.3 March. 2004 Unit Unit Note Note V V ...
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Unbuffered SODIMM(based on sTSOP) AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in ...
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Unbuffered SODIMM(based on sTSOP) Parameter Mode register set cycle time DQ & DM setup time to DQS DQ & DM hold time to DQS Control & Address input pulse width DQ & DM input pulse width Power down exit ...
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Unbuffered SODIMM(based on sTSOP) 8. I/O Setup/Hold Plateau Derating I/O Input Level (mV) ± 280 This derating table is used to increase tDS/tDH in the case where the input level is flat below VREF ± 310mV for a duration ...
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Unbuffered SODIMM(based on sTSOP) Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Refresh Self Refresh Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge ...
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Unbuffered SODIMM(based on sTSOP) PACKAGE DIMENSIONS 0.16 ± 0.039 (4.00 ± 0.10) 0.086 2.15 0.098 2.45 0.150 Max (3.80 Max) ± 0.04 0.0039 ± (1.00 0.10) Tolerances : ±.006(.15) unless otherwise specified The used device is 32Mx8 DDR SDRAM, ...