M470L6423EN Samsung semiconductor, M470L6423EN Datasheet - Page 12

• Manufacturer Part Number: M470L6423EN
• Description: 512MB Unbuffered SODIMM(based on sTSOP)
• Manufacturer: Samsung semiconductor

Command Truth Table
512MB Unbuffered SODIMM(based on sTSOP)
Register
Register
Refresh
Bank Active & Row Addr.
Read &
Column Address
Write &
Column Address
Burst Stop
Precharge
Active Power Down
Precharge Power Down Mode
DM
No operation (NOP) : Not defined
Note : 1. OP Code : Operand Code. A
2. EMRS/ MRS can be issued only at all banks precharge state.
3. Auto refresh functions are same as the CBR refresh of DRAM.
4. BA
5. If A
6. During burst write with auto precharge, new read/write command can not be issued.
7. Burst stop command is valid at every burst length.
8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
A new command can be issued 2 clock cycles after EMRS or MRS.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
If both BA
If BA
If BA
If both BA
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
0
10
~ BA
0
0
/AP is "High" at row precharge, BA
is "High" and BA
is "Low" and BA
COMMAND
1
0
0
Extended MRS
Mode Register Set
Auto Refresh
Self
Refresh
Auto Precharge Disable
Auto Precharge Enable
Auto Precharge Disable
Auto Precharge Enable
Bank Selection
All Banks
: Bank select addresses.
and BA
and BA
1
1
are "Low" at read, write, row active and precharge, bank A is selected.
are "High" at read, write, row active and precharge, bank D is selected.
1
1
is "High" at read, write, row active and precharge, bank C is selected.
is "Low" at read, write, row active and precharge, bank B is selected.
Entry
Entry
Entry
Exit
Exit
Exit
0
~ A
12
& BA
CKEn-1
0
and BA
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
0
~ BA
1
CKEn
1
are ignored and all banks are selected.
H
H
H
H
: Program keys. (@EMRS/MRS)
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
X
X
L
X
X
X
X
X
L
L
X
RP
CS
H
H
H
H
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
after the end of burst.
RAS
X
H
H
H
H
H
H
X
X
V
X
X
X
V
X
L
L
L
L
L
CAS
H
H
H
H
H
H
X
X
V
X
X
X
V
X
L
L
L
L
L
WE
H
H
X
H
H
X
V
X
X
H
X
V
X
H
L
L
L
L
L
BA
V
V
V
V
X
0,1
Rev. 1.3 March. 2004
A
OP CODE
OP CODE
10
H
H
H
Row Address
L
L
L
/AP
DDR SDRAM
X
X
X
X
X
X
X
A
A
Address
Address
Column
Column
12
9
X
~ A
, A
11
0
Note
1, 2
1, 2
4, 6
3
3
3
3
4
4
4
7
5
8
9
9