HYS64D64020GBDL Infineon, HYS64D64020GBDL Datasheet - Page 15

• Manufacturer Part Number: HYS64D64020GBDL
• Description: 200-Pin Small Outline Dual-In-Line Memory Modules
• Manufacturer: Infineon

Table 9
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
1) DRAM component currents only
2) Test condition for maximum values:
3) The module
4) DQ I/O (
5) The module
Data Sheet
DD0
DD1
DD2P
DD2F
DD2Q
DD3P
DD3N
DD4R
DD4W
DD5
DD6
DD7
m
modules
load conditions
I
DDx
I
DDQ
[component] + n
I
512 MB
2 Ranks
–5
typ.
1280
1400
96
736
384
272
960
1600
1680
1720
21
2560
DD
64
I
I
) currents are not included into calculations: module
DDx
DDx
Specification
values are calculated from the component
values are calculated from the corrponent
max.
1552
1672
144
896
544
384
1184
1992
2032
2152
38
3072
I
DD3N
512 MB
2 Ranks
–6
typ.
1208
1336
96
720
395
288
1008
1496
1632
1652
20
2248
64
[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
V
DD
= 2.7 V,
max.
1480
1560
144
880
448
336
1120
1840
1880
2080
36
2840
T
A
512 MB
2 Ranks
–7
typ.
1032
1168
88
560
320
240
832
1272
1368
1496
20
1856
= 10 °C
64
15
I
I
DDx
DDx
max.
1320
1400
128
640
400
288
960
1520
1600
1920
36
2360
data sheet values as: (m + n)
data sheet values as:
I
DD
values will be measured differently depending on
Small Outline DDR SDRAM Modules
512 MB
2 Ranks
–8
typ.
912
1000
80
480
288
208
672
1048
1104
1346
20
1600
HYS64D64020GBDL–[5/6/7/8]–B
64
max.
1160
1240
112
560
352
256
800
1280
1360
1760
36
2160
Electrical Characteristics
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
DDx
[component]
Note
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
V1.0, 2003-08
1)2)