HYS64V32220GDL Infineon, HYS64V32220GDL Datasheet - Page 7

• Manufacturer Part Number: HYS64V32220GDL
• Description: 144 pin SO-DIMM SDRAM Modules
• Manufacturer: Infineon

Operating Currents per memory bank
(Recommended Operating Conditions unless otherwise noted)
INFINEON Technologies
(TA = 0 to 70 oC; V
OPERATING CURRENT
trc=trcmin.,
All banks operated in random access,
all banks operated in ping-pong manner
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
BURST OPERATING CURRENT
tck = min.,
Read command cycling
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V,
tck = infinity.
Parameter & Test Condition
Notes:
1. These parameters depend on the cycle rate. These values are measured at 133 MHz for -7 & -7.5
2. These parameters are measured with continuous data stream during read access and all DQ toggling.
and at 100 MHz for -8 modules. Input signals are changed once during tck.
CL=3 and BL=4 is assumed and the data-out current is excluded.
SS
= 0 V; V
DD
= 3.3 V ± 0.3 V)
tck = min.
tck = min.
CKE>=VIH(min.)
CKE<=VIL(max.)
HYS64V16200GDL/HYS64V32220GDL
7
144 pin SO-DIMM SDRAM Modules
Symb.
ICC1
ICC4
ICC3N
ICC3P
ICC2P
ICC2N
ICC5
ICC6
-7/-7.5
920
160
200
600
960
7.2
40
8
680
120
180
400
880
-8
mA 1, 2
mA
mA
mA
mA
mA
mA
mA
Note
1,2
1
1
1
1
1
1
9.01