M366S1723ETS-C7A Samsung semiconductor, M366S1723ETS-C7A Datasheet - Page 11

• Manufacturer Part Number: M366S1723ETS-C7A
• Description: (M3xxSxxxxETx-C7A) SDRAM Unbuffered Module
• Manufacturer: Samsung semiconductor

ABSOLUTE MAXIMUM RATINGS
Note :
CAPACITANCE
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
64MB, 128MB, 256MB Unbuffered DIMM
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE)
Input capacitance (CLK)
Input capacitance (CS)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE)
Input capacitance (CLK)
Input capacitance (CS)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to Vss
Parameter
0
0
Pin
(V
~ A
~ A
DD
11
11
IN
)
)
= 3.3V, T
≤ V
DDQ
A
.
Symbol
= 23°C, f = 1MHz, V
V
V
V
V
V
I
OH
DD
OL
LI
IH
IL
Sym-
Sym-
C
C
C
C
C
C
C
C
C
C
C
C
C
C
bol
bol
OUT
OUT
IN1
IN2
IN3
IN4
IN5
IN6
IN1
IN2
IN3
IN4
IN5
IN6
V
V
Symbol
DD
IN
Min
-0.3
T
3.0
2.0
2.4
-10
, V
I
, V
P
-
STG
OS
REF
D
OUT
DDQ
M366S0924ETS
SS
Min
15
15
15
10
10
8
9
= 1.4V ± 200 mV)
= 0V, T
Min
M374S1723ETS(U)
28
28
28
18
18
8
9
A
Typ
Max
3.3
3.0
= 0 to 70°C)
25
25
25
13
15
10
12
0
-
-
-
Max
M366S1723ETS(U)
50
50
50
25
30
10
12
1.0 * # of component
Min
25
25
25
15
15
V
8
9
DDQ
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
-
Value
+0.3
50
Max
45
45
45
21
25
12
12
Rev. 1.3 February 2004
Min
M374S3323ETS(U)
50
50
28
18
18
13
13
Unit
M366S3323ETS(U)
uA
V
V
V
V
V
Min
45
45
25
15
15
10
13
Max
95
95
50
25
30
20
18
Max
85
85
45
21
25
15
18
I
I
OH
SDRAM
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Unit
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF