MRF21085SR3 Motorola, MRF21085SR3 Datasheet - Page 3

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MRF21085SR3

Manufacturer Part Number
MRF21085SR3
Description
RF Power Field Effect Transistors
Manufacturer
Motorola
Datasheet
ELECTRICAL CHARACTERISTICS — continued
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (continued)
MOTOROLA RF DEVICE DATA
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
Two - Tone Intermodulation Distortion
Input Return Loss
P
out
(V
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
, 1 dB Compression Point
DD
DD
DD
DD
DD
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, I
DQ
out
out
out
out
= 1000 mA, f = 2170 MHz)
= 90 W PEP, I
= 90 W PEP, I
= 90 W PEP, I
= 90 W PEP, I
Characteristic
Freescale Semiconductor, Inc.
DQ
DQ
DQ
DQ
For More Information On This Product,
= 1000 mA,
= 1000 mA,
= 1000 mA,
= 1000 mA,
Go to: www.freescale.com
(T
C
= 25°C unless otherwise noted)
Symbol
P1dB
IMD
G
IRL
η
ps
MRF21085R3 MRF21085SR3 MRF21085LSR3
Min
13.6
Typ
100
- 31
- 12
36
Max
Unit
dBc
dB
dB
%
W
3

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