K7R321882 Samsung semiconductor, K7R321882 Datasheet - Page 13

• Manufacturer Part Number: K7R321882
• Description: 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
• Manufacturer: Samsung semiconductor

K7R323682M
K7R321882M
K7R320982M
THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250
APPLICATION INRORMATION
Junction to Ambient
Junction to Case
Junction to Pins
MEMORY
CONTROLLER
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
thermal impedance. T
2. Periodically sampled and not 100% tested.
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
Source CLK
Source CLK
Return CLK
Return CLK
Data Out
Address
PRMETER
Data In
PRMETER
BW
W
R
J
=T
A
Vt
+ P
R
R=50
D
x
JA
Vt
Vt
Vt=V
D
SA
and V
REF
R W BW
DDQ
SYMBOL
=1.5V.
C
C
C
OUT
CLK
1Mx36 & 2Mx18 & 4Mx9 QDR
IN
SRAM#1
SYMBOL
0
JC
JA
JB
BW
1
- 13 -
TESTCONDITION
C C
V
V
OUT
K
IN
CQ
CQ
Q
ZQ R=250
=0V
-
K
=0V
20.8
Typ
2.3
4.3
Typ
D
SA
R
4
6
5
Vt
Vt
RW BW
Max
5
7
6
SRAM#4
TM
0
Unit
C
C
C
BW
/W
/W
/W
II b2 SRAM
Unit
pF
pF
pF
1
C C
NOTES
Dec. 2003
NOTES
K
CQ
ZQ
CQ
ZQ
Q
Rev 2.0
K
R=250