QM500 Mitsubishi Electric Semiconductor, QM500 Datasheet - Page 3

• Manufacturer Part Number: QM500
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

PERFORMANCE CURVES
1000
10
800
600
400
200
10
10
–1
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
10
COLLECTOR-EMITTER VOLTAGE V
1
0
2.4
0
COLLECTOR-EMITTER SATURATION
–2
BASE-EMITTER VOLTAGE V
T
T
V
I
C
2
j
CHARACTERISTICS (TYPICAL)
=25°C
j
CE
COMMON EMITTER OUTPUT
=25°C
CHARACTERISTIC (TYPICAL)
=100A
COMMON EMITTER INPUT
3
=2.5V
2.6
1
4
BASE CURRENT I
5
VOLTAGE (TYPICAL)
7
10
2.8
–1
2
2
3
4
5
3.0
3
7
10
I
C
B
=500A
0
(A)
T
T
2
3.2
I
j
j
=25°C
=125°C
4
C
BE
3
=300A
4
(V)
5
CE
7
3.4
(V)
5
10
1
10
10
10
10
10
10
10
10
10
10
10
–1
–1
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
5
4
3
2
2
1
0
10
10
SWITCHING TIME VS. COLLECTOR
1
COLLECTOR CURRENT (TYPICAL)
0
I
0
MITSUBISHI TRANSISTOR MODULES
B
2
2
=0.67A
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
2 3 4 5 7
3
3
T
T
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
4
4
j
j
j
j
t
t
=25°C
=125°C
=25°C
=125°C
CURRENT (TYPICAL)
5
5
s
on
V
HIGH POWER SWITCHING USE
7
7
t
BE(sat)
f
V
10
10
CE(sat)
1
1
2
2
10
3
3
4
4
2
5
5
7
7
10
2 3 4 5 7
10
QM500HA-H
V
I
–I
T
T
2
2
B1
CC
V
j
j
=25°C
=125°C
B2
2
2
=1A
CE
C
C
C
INSULATED TYPE
=300V
=10A
3
3
=2.5V
(A)
(A)
(A)
4
4
5
5
7
7
10
10
10
3
3
3
Feb.1999