QM500 Mitsubishi Electric Semiconductor, QM500 Datasheet - Page 4

• Manufacturer Part Number: QM500
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

0.08
0.06
0.04
0.02
10
10
10
10
10
10
0.1
2
7
5
4
3
2
7
5
4
3
2
FORWARD BIAS SAFE OPERATING AREA
0
1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
10
3
2
1
0
10
COLLECTOR-EMITTER VOLTAGE V
10
TRANSIENT THERMAL IMPEDANCE
0
–3
T
0
BASE REVERSE CURRENT –I
NON–REPETITIVE
0
I
I
CHARACTERISTIC (TRANSISTOR)
V
C
C
B1
2
2
2
CC
=500A
=25°C
SWITCHING TIME VS. BASE
=1A
2 3 4 5 7
3
3
3
=300V
4
4
4
T
T
j
j
5
5
5
=25°C
=125°C
CURRENT (TYPICAL)
7
7
7
10
10
10
1
1
–2
TIME (s)
2
2
10
3
3
t
4
4
f
1
5
5
7
7
2 3 4 5 7
10
10
2
–1
t
s
2
2
3
3
B2
4
4
5
5
(A)
CE
50µs
100µs
7
7
10
(V)
10
10
2
0
3
1600
1400
1200
1000
800
600
400
200
100
10
10
10
10
90
80
70
60
50
40
30
20
10
0
0
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
REVERSE BIAS SAFE OPERATING AREA
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
T
COLLECTOR-EMITTER REVERSE
100
20
CHARACTERISTICS) (TYPICAL)
j
=125°C
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
0.4
T
T
200
j
j
=25°C
=125°C
40
HIGH POWER SWITCHING USE
300
60
0.8
–V
–10A
CEO
400
80
1.2
(V)
500
100 120
SECOND
BREAKDOWN
AREA
I
QM500HA-H
B2
600
=–3A
1.6
C
INSULATED TYPE
( C)
700
140
CE
800
160
2.0
(V)
Feb.1999