AM29BL802CB-120RZE AMD [Advanced Micro Devices], AM29BL802CB-120RZE Datasheet - Page 45

• Manufacturer Part Number: AM29BL802CB-120RZE
• Description: 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

REVISION SUMMARY
Revision A (June 1, 1999)
Initial release.
Revision A+1 (June 25, 1999)
General Description
Corrected the device density in the first paragraph.
Command Definitions
Reading Array Data in Burst Mode: Added reference to
Figure 3 in the first paragraph.
Revision B (November 29, 1999)
Global
All speed options are now offered only at the regulated
voltage range of 3.0 to 3.6 V. The 90 and 120 speed
options now have a t
perature range. The 70 ns speed option is now avail-
able at the extended temperature range.
AC Characteristics
In Figures 17 and 18, deleted t
waveform.
Physical Dimensions
Updated drawing of SSOP to new version.
Revision C (June 20, 2000)
Global
The “advance information” data sheet designation has
been changed to “preliminary.” Only minor parameter
changes, if any, may occur. Speed, package, and tem-
perature range combinations may also change in future
data sheet revisions.
Distinctive Characteristics
Changed burst access time specification for the 65R
speed option in the industrial temperature range from
19 to 18 ns.
Product Selector Guide
Replaced t
burst mode access from asynchronous access times.
Note however, that in burst mode, t
ifications are identical. Changed t
speed option in the industrial temperature range from
19 to 18 ns.
Ordering Information
Burn-in processing is no longer available.
Requirements for Reading Array Data Array in
Asynchronous (Non-Burst) Mode
Clarified the description of how to terminate a burst
mode read operation.
November 3, 2006 22371C7
OE
with t
BACC
OE
of 26 ns at the industrial tem-
to more clearly distinguish
GHWL
OE
BACC
and t
; modified OE#
for the 65R
BACC
D A T A
spec-
Am29BL802C
S H E E T
Burst Mode Read with 40 MHz CLK figure
Changed t
trial temperature range from 19 to 18 ns.
Read Operations table
Changed t
industrial temperature range from 19 to 18 ns.
Burst Mode Read table
Changed t
industrial temperature range from 19 to 18 ns.
Burst Mode Read figure
Corrected BAA# waveform to return high before the
final clock cycle shown.
Erase and Programming Performance table, Erase
and Program Operations table, Alternate CE# Con-
trolled Erase and Program Operations table
Resolved differences in typical sector erase times. The
typical sector erase time for all sectors is 3 sec.
Revision C+1 (November 16, 2000)
Global
Deleted Preliminary status from document. Added
table of contents. Added Figure 1, In-system Sector
Protect/Unprotect Algorithms figure to document (was
missing from previous revisions).
Revision C+2 (July 22, 2002)
Pin Description, IND# End of Burst Indicator
Clarified description of IND# function.
Table 1, Device Bus Operations
In burst read operations section, changed BAA# to “H”
for “Load starting Burst Address” and Terminate
Current Burst Read Cycle; Start New Burst Read
Cycle.”
Requirements for Reading Array Data in Synchro-
nous (Burst) Mode
Modified section to clarify the description of the IND#
and burst read functions.
Burst Sequence Table
Deleted table.
Revision C+3 (November 22, 2002)
Distinctive Characteristics
Changed endurance to 1 million cycles.
E r a s e S u s p e n d / E r a s e R e s u m e C o m m a n d
Sequence
Noted that only asynchronous reads are allowed during
the erase suspend mode, added asynchronous mode
and burst mode section.
OE
BACC
OE
and t
and t
for the 65R speed option in the indus-
BACC
DF
for the 65R speed option in the
for the 65R speed option in the
43