AM29F040 AMD [Advanced Micro Devices], AM29F040 Datasheet - Page 13

• Manufacturer Part Number: AM29F040
• Description: 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

Low V
To avoid initiation of a write cycle during V
and power-down, the Am29F040 locks out write cycles
for V
voltages). When V
disabled, all internal program/erase circuits are
disabled, and the device resets to the read mode. The
Am29F040 ignores all writes until V
must ensure that the control pins are in the correct logic
state when V
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE or
WE will not initiate a write cycle.
CC
CC
< V
Write Inhibit
LKO
CC
> V
(see DC Characteristics section for
CC
LKO
< V
to prevent unintentional writes.
LKO
, the command register is
CC
> V
LKO
CC
. The user
power-up
Am29F040
Logical Inhibit
Writing is inhibited by holding any one of OE = V
CE = V
WE must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE = CE = V
OE = V
of WE. The internal state machine is automatically
reset to the read mode on power-up.
Sector Protect
Sectors of the Am29F040 may be hardware protected
using programming equipment at the users factory. The
protection circuitry will disable both program and erase
functions for the protected sector(s). Requests to pro-
gram or erase a protected sector will be ignored by the
device.
IH
IH
or WE = V
will not accept commands on the rising edge
IH
. To initiate a write cycle CE and
IL
and
13
IL
,