AM29F100 AMD [Advanced Micro Devices], AM29F100 Datasheet
AM29F100
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AM29F100 Summary of contents
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... FINAL Am29F100 1 Megabit (128 K x 8-bit/ 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 5.0 V 10% for read, erase, and program operations — Simplifies system-level power requirements High performance — maximum access time Low power consumption — ...
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... GENERAL DESCRIPTION The Am29F100 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt V supply. A 12.0 volt V ...
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... OE# V Detector CC A0–A15 A-1 - RY/BY# Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F100 Am29F100 -90 -120 -150 90 120 150 90 120 150 – DQ0 DQ15 Input/Output Buffers Data STB Latch Y-Gating Cell Matrix ...
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... DQ12 10 DQ4 DQ11 13 DQ3 14 DQ10 15 DQ2 16 DQ9 17 DQ1 18 DQ8 19 DQ0 Standard TSOP Reverse TSOP Am29F100 BYTE DQ15/A-1 44 DQ7 DQ14 43 DQ6 42 DQ13 41 DQ5 40 DQ12 39 DQ4 DQ11 36 DQ3 35 DQ10 34 DQ2 33 32 ...
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... V = Device Ground Pin Not Connected Internally LOGIC SYMBOL Am29F100 44 RESET A10 39 A11 38 A12 37 A13 36 A14 35 A15 BYTE DQ15/A ...
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... Volt-only Read, Program, and Erase Valid Combinations AM29F100T-70, AM29F100B-70 AM29F100T-90, EC, EI, EE, AM29F100B-90 FC, FI, FE, AM29F100T-120, AM29F100B-120 AM29F100T-150, AM29F100B-150 Valid Combinations list configurations planned to be sup- ported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations ...
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... The command register itself does not occupy any addressable memory location. The register is composed of latches that store the com- mands, along with the address and data information needed to execute the command. The contents of the Table 1. Am29F100 Device Bus Operations Operation CE# Read L ...
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... Refer to the AC Characteristics tables for RESET# pa- ) for read access rameters and timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state. Am29F100 represents the CC3 , the device enters IL SS (during Embedded Algorithms). The ...
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... V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In ad- dition, when verifying sector protection, the sector ad- Table 4. Am29F100 Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: ...
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... Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 1. Temporary Sector Unprotect Operation is removed ID Am29F100 START RESET (Note 1) Perform Erase or Program Operations RESET Temporary Sector ...
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... Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to read- ing array data (also applies during Erase Suspend). Am29F100 is greater than LKO or WE ...
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... Only erase operations can convert a “0” “1”. Embedded Program algorithm in progress No Increment Address Note: See the appropriate Command Definitions table for program command sequence. Figure 2. Program Operation Am29F100 START Write Program Command Sequence Data Poll from System Verify Data? No Yes Last Address? Yes ...
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... Erase Sus- pend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately ter- Am29F100 13 ...
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... Write Erase Command Sequence Data Poll from System No Data = FFh? Yes Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation Am29F100 Embedded Erase algorithm in progress 18926C-8 ...
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... No unlock or command cycles required when reading array data. 6. The Reset command is required to return to reading array data when device is in the autoselect mode DQ5 goes high (while the device is providing status data). Table 5. Am29F100 Command Definitions Bus Cycles (Notes 2–4) First Second Third ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29F100 Yes Yes PASS 18926C-9 ...
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... When the time-out is complete, DQ3 switches from “0” to “1.” The system may ignore DQ3 if the system can guarantee that the time between ad- ditional sector erase commands will always be less Am29F100 17 ...
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... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 5. Toggle Bit Algorithm Am29F100 1 No (Notes Program/Erase Operation Complete 18926C-10 ...
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... DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “DQ5: Exceeded Timing Limits” for more information. Table 6. Write Operation Status DQ7 (Note 1) DQ6 DQ7# Toggle 0 Toggle 1 No toggle Data Data DQ7# Toggle Am29F100 DQ5 (Note 2) DQ3 RY/BY N/A 1 Data Data ...
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... Operating ranges define those limits between which the functionality of the device is guaranteed. 20 +0.8 V –0.5 V –2.0 V Figure 6. Maximum Negative Overshoot to –2 0.5 V. During volt –2 +2 +0.5 V 2.0 V Figure 7. Maximum Positive Overshoot Am29F100 18926C-11 Waveform 18926C-12 Waveform ...
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... CC CC IL, OE Word Max Max 5.8 mA Min –2.5 mA Min Am29F100 Min Max Unit 1 1 1.0 mA –0.5 0 11.5 12.5 V 0.45 V 2.4 V 3.2 4 ...
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... V Max, OE IH, CE# and RESET 0 5 5.8 mA Min –2.5 mA Min –100 Min Am29F100 Min Max Unit 1 1.0 A Byte 40 mA Word 100 A –0.5 0 11.5 12.5 V 0.45 V 0.85 V ...
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... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 18926C-13 INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F100 -70 All others Unit 1 TTL gate L 30 100 0.0–3.0 0.45– ...
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... Test Setup Read Toggle and Data Polling t RC Addresses Stable t ACC OEH t CE HIGH Z Output Valid Figure 9. Read Operations Timings Am29F100 -70 -90 -120 -150 Unit Min 70 90 120 150 ns Max 70 90 120 150 ns Max 70 90 120 150 ns ...
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... RESET# RY/BY# CE#, OE# RESET# Test Setup Max Max Min Min Min Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 10. RESET# Timings Am29F100 All Speed Options Unit 20 s 500 ns 500 18926C-15 25 ...
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... Address DQ15 Input Output t FHQV The falling edge of the last WE# signal t SET ( HOLD AH and t specifications Am29F100 -70 -90 -120 -150 Unit 120 150 ns Data Output (DQ0–DQ7) Address Input 18926C-16 18926C-17 ...
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... Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Description Min Min Min Min Min Min Min Min Min Min Typ Typ Min Min Min Am29F100 -70 -90 -120 -150 Unit 70 90 120 150 ...
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... OUT Figure 13. Program Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase t Am29F100 Read Status Data (last two cycles WHWH1 Status D OUT t RB Read Status Data WHWH2 In Complete Progress t BUSY RB ...
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... Figure 16. Toggle Bit Timings (During Embedded Algorithms Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F100 VA High Z Valid Data True High Z True Valid Data 18926C- Valid Status Valid Data (stops toggling) 18926C-19 29 ...
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... RESET# Setup Time for Temporary Sector t RSP Unprotect Note: Not 100% tested RESET VIDR CE# WE# RY/BY# Figure 17. Temporary Sector Unprotect Timing Diagram 30 Min Min Program or Erase Command Sequence t RSP Am29F100 All Speed Options Unit 500 VIDR 18926C-20 ...
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... Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Am29F100 -70 -90 -120 -150 Unit 70 90 120 150 ...
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... PA for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F100 PA DQ7# D OUT = Array Data. OUT 18926C-21 ...
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... V, 100,000 cycles 5.0 Volt, one pin at a time. CC Test Conditions OUT Test Conditions C 150 125 C Am29F100 Unit Comments Excludes 00h programming prior to sec erasure (Note 4) s Excludes system-level overhead s (Note 5) sec , 100,000 cycles. Additionally, CC Min Max –1 1 – ...
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... PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW 34 23 13.10 15.70 13.50 16.30 22 2.80 MAX. SEATING PLANE 0.10 0.35 Am29F100 0.10 0.21 0 0.60 8 1.00 END VIEW 16-038-SO44-2 SO 044 DF83 8-8-96 lv ...
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... TS 048—48-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC TSR048—48-Pin Reverse Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC 48 25 18.30 18.50 19.80 20. 0.50 0. 18.30 18.50 19.80 20. 0.50 0.70 Am29F100 0.95 1.05 11.90 12.10 0.50 BSC 0.05 0.15 16-038-TS48-2 0.08 TS 048 0.20 DT95 8-8-96 lv 0.10 0.21 0.95 1.05 11.90 12.10 0.50 BSC 0.05 0.15 SEATING PLANE 16-038-TS48 TSR048 0.08 DT95 0.20 8-8-96 lv 0.10 0.21 35 ...
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... REVISION SUMMARY FOR AM29F100 Revision B+1 Product Selector Guide Replaced the -75 column (70 ns, 5%) with the -70 col- umn (70 ns, 10%). Ordering Information, Standard Products The -70 designation is now listed in the part number ex- ample. Valid Combinations: Replaced the -75 combinations with -70. The 70 ns speed grade is now available in the same combinations as the other speed grades ...