AM29F200AB-120EC AMD [Advanced Micro Devices], AM29F200AB-120EC Datasheet - Page 35

• Manufacturer Part Number: AM29F200AB-120EC
• Description: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 5.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1
6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time (Note 3)
Input Voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
Parameter
A
Input Capacitance
Output Capacitance
Control Pin Capacitance
= 25 C, f = 1.0 MHz.
Parameter Description
CC
. Test conditions: V
Parameter Description
SS
on all I/O pins
Typ (Note 1)
CC
= 4.5 V, 100,000 cycles.
CC
1.8
P R E L I M I N A R Y
14
1
7
7
= 5.0 V, one pin at a time.
Am29F200A
Test Setup
V
V
V
OUT
IN
IN
Limits
= 0
= 0
Max (Note 2)
= 0
300
600
5.4
56
8
Test Conditions
150 C
125 C
Typ
8.5
6
8
Unit
sec
sec
sec
CC
s
s
, 100,000 cycles. Additionally,
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
–100 mA
–1.0 V
Min
Max
Min
7.5
12
10
10
20
Comments
V
+100 mA
CC
Max
Years
Years
+ 1.0 V
Unit
Unit
pF
pF
pF
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