AM29F400B AMD [Advanced Micro Devices], AM29F400B Datasheet - Page 37

• Manufacturer Part Number: AM29F400B
• Description: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

REVISION SUMMARY
Revision B
Global
Added -55 and -60 speed options, deleted -65 speed
option. Changed data sheet designation from Advance
Information to Preliminary.
Connection Diagrams
Corrected pinouts on all packages: deleted A18.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 µs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 µs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 µs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V
to 12.5 V, with a V
to 50 µA. Added I
values to TTL/NMOS table. Revised CMOS typical
standby current (I
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms.
AC Characteristics, Erase/Program Operations
Corrected t
ns.
Erase and Programming Performance
Corrected word and chip programming times.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
AH
specification for -90 speed option to 45
CC
CC3
CC4
test condition of 5.0 V. Revised I
).
ID
specification. Added typical
min and max values are 11.5
P R E L I M I N A R Y
Am29F400B
LIT
Revision C
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
AC Characteristics
Changed t
Revision C+1
Table 2, Top Boot Block Sector Address Table
Corrected the sector size for SA10 to 16 Kbytes/8
Kwords.
DC Characteristics—TTL/NMOS Compatible
Deleted Note 4.
Revision C+2
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
AC Characteristics
Word/Byte Configuration: Changed t
for 55 ns device.
Erase/Program Operations: Changed t
mode specification to 12 µs. Corrected the notes refer-
ence for t
100% tested. Corrected the note reference for t
This parameter is not 100% tested.
Changed t
Alternate CE# Controlled Erase/Program Operations:
Changed t
Corrected the notes reference for t
These parameters are 100% tested.
Changed t
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
WHWH1
DF
DS
DS
WHWH1
and T
and t
and t
and t
CP
CP
word mode specification to 12 µs.
FLQZ
specifications for 55 ns device.
specifications for 55 ns device.
WHWH2
to 15 ns for -55 speed option.
VIDR
. These parameters are
. This parameter is not
WHWH1
FHQV
WHWH1
and t
specification
WHWH2
word
VCS
37
.
.