AM29LV081 AMD [Advanced Micro Devices], AM29LV081 Datasheet
AM29LV081
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AM29LV081 Summary of contents
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... PRELIMINARY Am29LV081 8 Megabit ( 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS Optimized architecture for Miniature Card and mass storage applications Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3 ...
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... GENERAL DESCRIPTION The Am29LV081 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt V supply to perform read, program, CC and erase operations. A standard EPROM pro- grammer can also be used to program and erase the device ...
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... V -90R CC = 2.7–3 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Y-Decoder STB Timer X-Decoder Am29LV081 Am29LV081 -100 -120 -150 100 120 150 100 120 150 – DQ0 DQ7 Input/Output Buffers Data STB Y-Gating ...
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... DQ4 DQ3 13 DQ2 14 DQ1 15 DQ0 Standard TSOP Reverse TSOP Am29LV081 A17 A19 36 A10 DQ7 35 DQ6 34 DQ5 33 DQ4 DQ3 27 ...
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... Hardware reset pin, active low RY/BY# = Ready/Busy# output V = 3.0 volt-only single power supply CC (see Product Selector Guide for speed options and voltage supply tolerances Device ground Pin not connected internally LOGIC SYMBOL 20 A0–A19 CE# OE# WE# RESET# Am29LV081 8 DQ0–DQ7 RY/BY# 20977C-3 5 ...
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... Reverse Pinout (TSR040) SPEED OPTION See Product Selector Guide and Valid Combinations DEVICE NUMBER/DESCRIPTION Am29LV081 8 Megabit ( 8-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program, and Erase Valid Combinations list configurations planned to be sup- ported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations ...
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... The command register it- self does not occupy any addressable memory loca- tion. The register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. The contents of Table 1. Am29LV081 Device Bus Operations Operation Read Write Standby ...
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... Figure 13 for the timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- RP ance state. Am29LV081 ±0.3 V, the device RESET# is held CC4 ±0.3 V, the standby current will SS (during Embedded Algorithms). The ...
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... When using programming equipment, the autoselect mode requires V (11 12 address pin A9. ID Address pins A6, A1, and A0 must be as shown in Table 3. In addition, when verifying sector protection, the sec- Table 3. Am29LV081 Autoselect Codes (High Voltage Method) Description Manufacturer ID: AMD Device ID: Am29LV081 Sector Protection Verification L = Logic Low = V ...
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... Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 1. Temporary Sector Unprotect Operation power-up and LKO Am29LV081 or WE initiate a write cy and OE during power IL IH START RESET (Note 1) ...
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... The system can deter- mine the status of the program operation by using DQ7, DQ6, or RY/BY#. See “Write Operation Status” for in- formation on these status bits. Any commands written to the device during the Em- bedded Program Algorithm are ignored. Note that a Am29LV081 ID 11 ...
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... It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the Am29LV081 ...
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... Write Erase Command Sequence from System No Data = FFh? Erasure Completed Notes: 1. See Table 4 for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation Am29LV081 START Data Poll Embedded Erase algorithm in progress Yes 20977C-6 13 ...
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... Table 4. Am29LV081 Command Definitions Command Sequence (Note 1) Read (Note 5) Reset (Note 6) Manufacturer ID Auto- Device ID select Sector Protect Verify (Note 7) (Note 8) Program Chip Erase Sector Erase Erase Suspend (Note 9) Erase Resume (Note 10) Legend Don’t care RA = Address of the memory location to be read. ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29LV081 Yes No Yes Yes No ...
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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. Am29LV081 ...
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... To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been ac- cepted. Table 5 shows the outputs for DQ3. 20977C-8 Am29LV081 17 ...
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... DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details Table 5. Write Operation Status DQ7 DQ5 (Note 2) DQ6 (Note 1) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29LV081 DQ2 DQ3 (Note 2) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A 0 ...
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... Operating ranges define those limits between which the func- tionality of the device is guaranteed +0.8 V –0.5 V –2 Figure 6. Maximum Negative Overshoot +0 +2 +0.5 V 2.0 V Figure 7. Maximum Positive Overshoot Am29LV081 20977C-9 Waveform 20977C-10 Waveform 19 ...
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... 4.0 mA min I = –2 min I = –100 µ min . Typical Am29LV081 Min Typ Max Unit 1.0 µA 35 µA 1.0 µ 0.2 5 µA 0.2 5 µA 0.2 5 µA –0 ...
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... Figure 8. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note 1500 2000 2500 Time Frequency in MHz Figure 9. Typical I vs. Frequency CC1 Am29LV081 3000 3500 4000 20977C- 20977C-12 21 ...
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... Input timing measurement reference levels Output timing measurement reference levels 20977C-13 INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level Am29LV081 -90R, -120, -100 -150 Unit 1 TTL gate L 30 100 0.0– ...
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... Read Toggle and Data# Polling t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 12. Read Operations Timings Am29LV081 Speed Option -90R -100 -120 -150 Min 90 100 120 150 Max 90 100 120 150 Max 90 100 120 150 Max ...
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... Test Setup Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 13. RESET# Timings Am29LV081 All Speed Options Unit Max 20 Max 500 Min 500 Min 50 Min 20 Min 20977C-16 µ ...
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... See the “Erase and Programming Performance” section for more information Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min Min Min Am29LV081 -90R -100 -120 -150 90 100 120 150 ...
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... Note program address program data WPH A0h t BUSY is the true data at the program address. OUT Figure 14. Program Operation Timings Am29LV081 Read Status Data (last two cycles WHWH1 D Status OUT t RB 20977C-17 ...
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... Note sector address (for Sector Erase Valid Address for reading status data (see “Write Operation Status”). Figure 15. Chip/Sector Erase Operation Timings 555h for chip erase WPH t DH 30h 10 for Chip Erase t BUSY Am29LV081 Read Status Data WHWH2 In Complete Progress t RB 20977C-18 27 ...
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... Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29LV081 VA High Z Valid Data True High Z True Valid Data 20977C- Valid Status Valid Data (stops toggling) 20977C-20 ...
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... Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 18. DQ2 vs. DQ6 Description Min Min Program or Erase Command Sequence t RSP Am29LV081 Erase Resume Erase Erase Complete Read 20977C-21 All Speed Options Unit 500 VIDR ...
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... See the “Erase and Programming Performance” section for more information Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Am29LV081 -90R -100 -120 -150 90 100 120 150 ...
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... PA for program SA for sector erase XXX for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29LV081 PA DQ7# D OUT = data written to the OUT 20977C-23 31 ...
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... V, 100,000 cycles. CC –1.0 V –1.0 V –100 mA = 3.0 V, one pin at a time. CC Test Setup OUT V IN Test Conditions 150 C 125 C Am29LV081 Unit Comments s Excludes 00h programming prior to erasure (Note 4) s µs Excludes system level overhead (Note 100,000 cycles. Additionally, CC Min Max 12 ...
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... PHYSICAL DIMENSIONS TS 040—40-Pin Standard TSOP (measured in millimeters) Pin 1 I. 18.30 18.50 19.80 20.20 1.20 MAX * For reference only. BSC is an ANSI standard for Basic Space Centering 9.90 10.10 21 0.08 0.20 0.10 0.21 0˚ 5˚ 0.50 0.70 Am29LV081 0.95 1.05 0.50 BSC 0.05 0.15 16-038-TSOP-1_AE TS 040 2-27- ...
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... PHYSICAL DIMENSIONS TSR040—40-Pin Reverse TSOP (measured in millimeters) Pin 1 I. 18.30 18.50 19.80 20.20 1.20 MAX * For reference only. BSC is an ANSI standard for Basic Space Centering 9.90 10.10 21 0.08 0.20 0.10 0.21 0˚ 5˚ 0.50 0.70 Am29LV081 0.95 1.05 0.50 BSC 0.05 0.15 16-038-TSOP-1_AE TSR040 2-27-97 lv ...
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... REVISION SUMMARY FOR AM29LV081 Revision C Global Revised formatting to be consistent with other current 3.0 volt-only data sheets. Revision C+1 DC Characteristics Changed Note 1 to indicate that OE listed current. AC Characteristics Erase/Program Operations; Alternate CE# Controlled Erase/Program Operations: Corrected the notes refer- ence for t and t ...