AM29LV128MH AMD [Advanced Micro Devices], AM29LV128MH Datasheet - Page 57

• Manufacturer Part Number: AM29LV128MH
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC Specifications listed are tested with V
September 9, 2003
JEDEC
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
EHWH
AVWL
EHDX
GHEL
WLEL
ELAX
DVEH
ELEH
EHEL
AVAV
Parameter
t
t
WHWH1
WHWH2
t
Std.
t
GHEL
t
t
t
t
t
t
t
t
CPH
WC
WH
DH
WS
AS
AH
DS
CP
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation
(Notes 2, 4)
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Single Byte Word
Program Operation (Note 2, 5)
Accelerated Single Byte Word
Programming Operation (Note 2, 5)
Sector Erase Operation (Note 2)
IO
= V
D A T A S H E E T
CC
. Contact AMD for information on AC operation with V
Am29LV128MH/L
Per Word
Per Word
Per Byte
Per Byte
Word
Word
Byte
Byte
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Typ
93R
90
103, 103R 113, 113R 123, 123R
100
Speed Options
6.25
12.5
240
7.5
0.5
45
45
45
30
15
60
60
54
54
0
0
0
0
0
110
IO
≠
V
CC
120
.
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
µs
µs
55