AM29LV128MH100EF AMD [Advanced Micro Devices], AM29LV128MH100EF Datasheet

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AM29LV128MH100EF

Manufacturer Part Number
AM29LV128MH100EF
Description
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
Am29LV128MH/L
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not recommended for designs. For new and current designs,
S29GL256N supersedes Am29LV128MH/L and is the factory-recommended migration path. Please
refer to the S29GL256N datasheet for specifications and ordering information. Availability of this
document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 25270 Revision C
Amendment 7 Issue Date January 31, 2007

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AM29LV128MH100EF Summary of contents

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Am29LV128MH/L Data Sheet This product has been retired and is not recommended for designs. For new and current designs, S29GL256N supersedes Am29LV128MH/L and is the factory-recommended migration path. Please refer to the S29GL256N datasheet for specifications and ordering information. Availability ...

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DATA SHEET Am29LV128MH/L 128 Megabit ( 16-Bit/ 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control This product has been retired and is not recommended for designs. For new and current designs, S29GL256N supersedes ...

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GENERAL DESCRIPTION The Am29LV128MH 128 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 words or 16,777,216 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data ...

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TABLE OF CONTENTS Continuity of Specifications ............................................................. i For More Information ....................................................................... i Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6 Block Diagram ...

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PRODUCT SELECTOR GUIDE Part Number Regulated Voltage Range V = 3.0–3 Speed/ Voltage Option Full Voltage Range V = 2.7–3 Max. Access Time (ns) Max. CE# Access Time (ns) Max. Page access time (t ) PACC ...

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CONNECTION DIAGRAMS NC 1 A22 2 A15 3 A14 4 A13 5 A12 6 A11 7 A10 A19 11 A20 12 WE# 13 RESET# 14 A21 15 WP#/ACC 16 RY/BY# 17 A18 18 A17 19 ...

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CONNECTION DIAGRAMS A22 A7 B7 A13 A12 WE# RESET RY/BY# WP#/ACC A17 Special Package Handling Instructions Special handling ...

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PIN DESCRIPTION A22– Address inputs DQ14–DQ0 = 15 Data inputs/outputs DQ15/A-1 = DQ15 (Data input/output, word mode), A-1 (LSB Address input, byte mode) CE# = Chip Enable input OE# = Output Enable input WE# = Write Enable input ...

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ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29LV128MH/L H 123R PC DEVICE NUMBER/DESCRIPTION Am29LV128MH/L 128 Megabit ( ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory loca- tion. The register is a latch ...

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Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins control and selects the device. OE# is the output con- trol and gates array data to ...

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CE# and RESET# are held ± 0.3 V, the device will be in the standby mode, but IO the standby current will be greater. The device re- quires standard access time (t CE ...

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Table 2. Sector Address Table (Sheet Sector A22–A15 SA0 SA1 SA2 SA3 SA4 SA5 ...

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Table 2. Sector Address Table (Sheet Sector A22–A15 SA47 SA48 SA49 SA50 SA51 SA52 ...

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Table 2. Sector Address Table (Sheet Sector A22–A15 SA95 SA96 SA97 SA98 SA99 SA100 ...

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Table 2. Sector Address Table (Sheet Sector A22–A15 SA143 SA144 SA145 SA146 SA147 SA148 ...

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Table 2. Sector Address Table (Sheet Sector A22–A15 SA191 SA192 SA193 SA194 SA195 SA196 ...

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Table 2. Sector Address Table (Sheet Sector A22–A15 SA239 SA240 SA241 SA242 SA243 SA244 ...

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Autoselect Mode The autoselect mode provides manufacturer and de- vice identification, and sector group protection verifica- tion, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be pro- grammed ...

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Sector Group Protection and Unprotection The hardware sector group protection feature disables both program and erase operations in any sector group. The hardware sector group unprotection fea- ture re-enables both program and erase operations in previously protected sector groups. Sector ...

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Write Protect (WP#) The Write Protect function provides a hardware method of protecting the first or last sector group with- out using V . Write Protect is one of two functions pro- ID vided by the WP#/ACC input. If the ...

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START PLSCNT = 1 RESET Wait 1 μs No First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector address with ...

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Secured Silicon Sector Flash Memory Region The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identifica- tion through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 bytes in length, and uses a ...

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START If data = 00h, RESET# = SecSi Sector unprotected. If data = 01h, SecSi Sector is Wait 1 μs protected. Write 60h to any address Remove V from RESET# Write 40h to SecSi ...

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Addresses (x16) Data 10h 0051h 11h 0052h 12h 0059h 13h 0002h 14h 0000h 15h 0040h 16h 0000h 17h 0000h 18h 0000h 19h 0000h 1Ah 0000h Addresses (x16) Data 1Bh 0027h 1Ch 0036h 1Dh 0000h 1Eh 0000h 1Fh 0007h 20h 0007h ...

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Addresses (x16) Data 27h 0018h 28h 0002h 29h 0000h 2Ah 0005h 2Bh 0000h 2Ch 0001h 2Dh 00FFh 2Eh 0000h 2Fh 0000h 30h 0001h 31h 0000h 32h 0000h 33h 0000h 34h 0000h 35h 0000h 36h 0000h 37h 0000h 38h 0000h 39h ...

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Table 9. Primary Vendor-Specific Extended Query Addresses (x16) Data 40h 0050h 41h 0052h 42h 0049h 43h 0031h 44h 0033h 45h 0008h 46h 0002h 47h 0001h 48h 0001h 49h 0004h 4Ah 0000h 4Bh 0000h 4Ch 0001h 4Dh 00B5h 4Eh 00C5h 0004h/ ...

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COMMAND DEFINITIONS Writing specific address and data commands or se- quences into the command register initiates device op- erations. Table 10 and Table 11 register command sequences. Writing incorrect ad- dress and data values or writing them in the improper ...

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Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte random Elec- tronic Serial Number (ESN). The system can access the Secured Silicon Sector region by issuing the ...

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Write buffer locations may be loaded in any order. The write-buffer-page address must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be per- ...

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Write “Write to Buffer” command and Sector Address Write number of addresses to program minus 1(WC) and Sector Address Write first address/data Yes Abort Write to Buffer Operation? (Note 1) Write next address/data pair WC = ...

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Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Increment Address Last Address? Programming Completed Note: See Table 10 and Table 11 for program command sequence. Figure 5. Program Operation January 31, 2007 ...

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Program Operation or Write-to-Buffer Sequence in Progress Write Program Suspend Write address/data Command Sequence XXXh/B0h Command is also valid for Erase-suspended-program operations Wait 15 μs Autoselect and SecSi Sector Read data as read operations are also allowed required Data cannot ...

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The system can monitor DQ3 to determine if the sec- tor erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the ris- ing edge of the final WE# pulse in the command ...

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START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System No Data = FFh? Yes Erasure Completed Figure 7. Erase Operation Notes: 1. See Table 10 and Table 11 for erase command sequence. 2. See ...

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Command Definitions Table 10. Command Definitions (x16 Mode, BYTE Command Sequence (Note 1) Addr Read (Note 6) 1 Reset (Note 7) 1 Manufacturer ID 4 Device ID (Note 9) 4 Secured Silicon Sector Factory 4 Protect (Note 10) ...

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Table 11. Command Definitions (x8 Mode, BYTE Command Sequence (Note 1) Addr Read (Note 6) 1 Reset (Note 7) 1 Manufacturer ID 4 Device ID (Note 9) 4 Secured Silicon Sector Factory 4 Protect (Note 10) Sector Group ...

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WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 12 and the following subsections describe the function of these bits. DQ7 and DQ6 each ...

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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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START Read DQ7–DQ0 Read DQ7–DQ0 No Toggle Bit = Toggle? Yes No DQ5 = 1? Yes Read DQ7–DQ0 Twice Toggle Bit No = Toggle? Yes Program/Erase Operation Not Program/Erase Complete, Write Operation Complete Reset Command Note: The system should recheck ...

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In this case, the system must start at the beginning of the algorithm when it returns to de- termine the status of the operation (top of Figure 9). DQ5: Exceeded Timing Limits DQ5 indicates whether the program, ...

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Status Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Program-Suspended Program Program- Sector Suspend Suspend Non-Program Mode Read Suspended Sector Erase-Suspended Erase- Sector Suspend Erase Non-Erase Suspended Read Suspend Sector Mode Erase-Suspend-Program (Embedded Program) Busy (Note 3) Write-to- Buffer Abort ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS CMOS Compatible Parameter Parameter Description Symbol (Notes) I Input Load Current ( A9, ACC Input Load Current LIT I Output Leakage Current LO I Reset Leakage Current LR V Active Read Current CC I CC1 (2, ...

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TEST CONDITIONS Device Under Test C 6.2 kΩ L Note: Diodes are IN3064 or equivalent Figure 12. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted 3.0 V 1.5 V Input 0.0 V Note < ...

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AC CHARACTERISTICS Read-Only Operations Parameter JEDEC Std. Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV CE t Page Access Time PACC t ...

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AC CHARACTERISTICS A22-A2 A1-A0* Data Bus CE# OE# * Figure shows word mode. Addresses are A1–A-1 for byte mode Same Page PACC PACC t ACC Qa ...

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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std. RESET# Pin Low (During Embedded Algorithms) t Ready to Read Mode (See Note) RESET# Pin Low (NOT During Embedded t Ready Algorithms) to Read Mode (See Note) t RESET# Pulse Width RP ...

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AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL AS t Address Setup Time to OE# low during toggle bit polling ASO t t ...

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RY/BY# CE#, OE# RESET# RY/BY# CE#, OE# RESET# January 31, 2007 25270C7 Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY VCS Notes program address program data Illustration shows device in word ...

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AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE Data 55h RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid ...

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AC CHARACTERISTICS Addresses t POLL CE OE# t OEH WE# DQ15 and DQ7 DQ14–DQ8, DQ6–DQ0 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data ...

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AC CHARACTERISTICS Addresses CE# t OEH WE# OE Valid Data DQ6/DQ2 (first read) RY/BY# Note Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array ...

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AC CHARACTERISTICS Temporary Sector Group Unprotect Parameter JEDEC Std Description t V Rise and Fall Time (See Note) VIDR ID RESET# Setup Time for Temporary Sector t RSP Unprotect Note: 1. Not 100% tested Specifications listed are tested ...

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AC CHARACTERISTICS RESET# SA, A6, A1, A0 Sector Group Protect or Unprotect Data 60h 1 µs CE# WE# OE# * For sector group protect For sector group ...

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AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time ELAX Data Setup ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Single Word Program Time (Note 3) Accelerated Single Word Program Time (Note 3) Total Write Buffer Program Time (Note Per Byte Effective Write Buffer Program Time (Note 5) Per ...

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TSOP PIN AND BGA PACKAGE CAPACITANCE Parameter Symbol Parameter Description C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Notes: 1. Sampled, not 100% tested. 2. Test conditions T = 25° 1.0 MHz. A ...

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PHYSICAL DIMENSIONS TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package (TSOP) PACKAGE TS/TSR 56 JEDEC MO-142 (B) EC SYMBOL MIN. NOM. MAX. A --- --- 1.20 A1 0.05 --- 0.15 A2 0.95 1.00 1.05 b1 0.17 0.20 0.23 b 0.17 0.22 0.27 ...

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PHYSICAL DIMENSIONS LAA064—64-Ball Fortified Ball Grid Array Package January 31, 2007 25270C7 Am29LV128MH/L 63 ...

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REVISION SUMMARY Revision A (October 3, 2001) Initial release as abbreviated Advance Information data sheet. Revision A+1 (March 20, 2002) Distinctive Characteristics Clarified description of Enhanced VersatileIO control. Ordering Information Corrected device density in device number/descrip- tion. Physical Dimensions Added ...

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Common Flash Memory Interface (CFI) Changed wording in last sentence of third paragraph from, “...the autoselect mode.” to “...reading array data.” Changed CFI website address Revision B+3 (December 2, 2002) Global Added sector group protection throughout datasheet and added Table ...

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Revision C+3 (February 27, 2004) Global Changed Datasheet to Advanced Information. Table 1, Device Bus Operations Modified ACC column to replace instances L/H. Customer Lockable: Secured Silicon Sector NOT Programmed or Protected at the Factory Removed second ...

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