SI7880DP-T1 Vishay Semiconductors, SI7880DP-T1 Datasheet

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SI7880DP-T1

Manufacturer Part Number
SI7880DP-T1
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI7880DP-T1

Date_code
08+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7880DP-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7880DP-T1
Quantity:
37
Part Number:
SI7880DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7880DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71875
S-31727—Rev. C, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
30
(V)
8
6.15 mm
D
7
Ordering Information: Si7880DP-T1
D
0.00425 @ V
0.003 @ V
6
D
J
J
a
a
r
PowerPAK SO-8
DS(on)
= 150_C)
= 150_C)
Bottom View
a
a
5
Parameter
Parameter
D
GS
GS
(W)
a
a
= 10 V
= 4.5 V
1
S
N-Channel 30-V (D-S) MOSFET
2
S
a
3
S
5.15 mm
4
G
A
I
D
29
25
= 25_C UNLESS OTHERWISE NOTED)
(A)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D New Low Thermal Resistance PowerPAKr Package with
D 100% R
APPLICATIONS
D DC/DC Converters
D Secondary Synchronous Rectifier
Symbol
Symbol
Low 1.07-mm Profile
-
T
R
R
R
V
V
J
I
I
P
P
, T
DM
thJC
I
I
AS
I
thJA
DS
GS
D
D
S
D
D
Low-Side MOSFET in Synchronous Buck in Desktops
stg
g
Tested
G
10 secs
Typical
N-Channel MOSFET
4.5
5.4
3.4
1.0
29
25
18
50
-55 to 150
D
S
"20
30
60
50
Steady State
Maximum
Vishay Siliconix
1.6
1.9
1.2
1.5
18
14
23
65
Si7880DP
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
1

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