SI4948EY-T1-E3 Vishay Semiconductors, SI4948EY-T1-E3 Datasheet

SI4948EY-T1-E3

Manufacturer Part Number

SI4948EY-T1-E3

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4948EY-T1-E3.pdf (5 pages)

Specifications of SI4948EY-T1-E3

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4948EY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Download datasheet (82Kb)

Notes

Document Number: 70166

S-99444—Rev. E, 29-Nov-99

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Surface Mounted on FR4 Board, t

–60

(V)

Top View

SO-8

Dual P-Channel 60-V (D-S), 175 C MOSFET

0.150 @ V

0.120 @ V

= 175 C)

DS(on)

Parameter

10 sec.

( )

= –4.5 V

= –10 V

(A)

3.1

2.8

P-Channel MOSFET

= 25 C

= 70 C

= 25 C

= 70 C

Symbol

, T

thJA

stg

P-Channel MOSFET

www.vishay.com FaxBack 408-970-5600

–55 to 175

Limit

Vishay Siliconix

–2.0

62.5

–60

2.4

1.7

3.1

2.6

Si4948EY

Unit

C/W

2-1

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