SI4946EY-T1-E3 Vishay Semiconductors, SI4946EY-T1-E3 Datasheet

SI4946EY-T1-E3

Manufacturer Part Number

SI4946EY-T1-E3

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4946EY-T1-E3.pdf (5 pages)

Specifications of SI4946EY-T1-E3

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4946EY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 5
Download datasheet (87Kb)

Notes

Document Number: 70157

S-50524—Rev. E, 28-Mar-05

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

Single Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Surface Mounted on FR4 Board, t v 10 sec.

(V)

Ordering Information: Si4946EY

Dual N-Channel 60-V (D-S), 175_C MOSFET

0.075 @ V

0.055 @ V

= 175_C)

DS(on)

Top View

Si4946EY-T1 (with Tape and Reel)

Si4946EY—E3 (Lead (Pb)-Free)

Si4946EY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

Parameter

SO-8

Parameter

(W)

= 4.5 V

= 10 V

= 25_C UNLESS OTHERWISE NOTED)

4.5

3.9

(A)

L = 0 1 mH

L = 0.1 mH

= 25_C

= 70_C

= 25_C

= 70_C

FEATURES

D TrenchFETr Power MOSFET

D 175_C Maximum Junction Temperature

D 100% R

Symbol

, T

thJA

stg

Tested

N-Channel MOSFET

−55 to 175

Vishay Siliconix

Limit

"20

62.5

4.5

3.8

7.2

2.4

1.7

Si4946EY

www.vishay.com

Available

Pb-free

Unit

_C/W

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