SI4884DY-T1-E3 Vishay Semiconductors, SI4884DY-T1-E3 Datasheet

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SI4884DY-T1-E3

Manufacturer Part Number
SI4884DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI4884DY-T1-E3

Case
SOP8
Date_code
09+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4884DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 947
Part Number:
SI4884DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 70946
S-03950—Rev. C, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot
V
Ordering Information: Si4884DY
Surface Mounted on FR4 Board.
t v 10 sec.
DS
30
30
(V)
G
S
S
S
1
2
3
4
N-Channel Reduced Q
Si4884DY-T1 (with Tape and Reel)
Top View
J
J
SO-8
a, b
a, b
0.0165 @ V
0.0105 @ V
= 150_C)
= 150_C)
r
DS(on)
Parameter
Parameter
a, b
a, b
GS
GS
8
7
6
5
a
a
(W)
= 4.5 V
= 10 V
a, b
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
I
N-Channel MOSFET
D
12
10
(A)
Steady State
Steady State
t v 10 sec
T
T
T
T
A
A
A
A
g
= 25_C
= 70_C
= 25_C
= 70_C
, Fast Switching MOSFET
G
D
S
D
Symbol
Symbol
T
D
S S
R
R
R
V
V
J
I
P
P
, T
DM
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
D
stg
Typical
35
68
18
- 55 to 150
Limit
"20
2.95
Vishay Siliconix
2.3
1.9
30
12
10
50
Maximum
42
80
23
Si4884DY
www.vishay.com
Unit
_C/W
Unit
C/W
_C
W
W
V
V
A
A
2-1

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