SI4856ADY-T1-E3 Vishay Semiconductors, SI4856ADY-T1-E3 Datasheet

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SI4856ADY-T1-E3

Manufacturer Part Number

SI4856ADY-T1-E3

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4856ADY-T1-E3.pdf (7 pages)

Specifications of SI4856ADY-T1-E3

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI4856ADY-T1-E3

Manufacturer:

VISHAY

Quantity:

25 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI4856ADY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes

a.

b.

Document Number: 73239

S-50031—Rev. A, 17-Jan-05

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Pulse Source-Drain Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Maximum Junction to Ambient (MOSFET)

Maximum Junction-to-Ambient (MOSFET)

Maximum Junction-to-Foot (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

t = 10 sec

DS

30

30

(V)

Ordering Information: Si4856ADY—E3

0.0076 @ V

0.0052 @ V

r

DS(on)

J

J

a

a

G

S

S

S

= 150_C)

= 150_C)

GS

GS

Parameter

Parameter

(W)

= 4.5 V

= 10 V

1

2

3

4

a, b

a, b

Si4856ADY-T1—E3 (with Tape and Reel)

a

a

Top View

N-Channel 30-V (D-S) MOSFET

SO-8

a, b

I

D

17

14

(A)

8

7

6

5

A

D

D

D

D

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

Q

t v 10 sec

L = 0 1 mH

L = 0.1 mH

T

T

T

T

T

T

T

T

C

C

A

A

C

C

A

A

g

New Product

= 25_C

= 70_C

= 25_C

= 70_C

= 25_C

= 70_C

= 25_C

= 70_C

(Typ)

21

21

Symbol

Symbol

T

R

R

R

J

V

V

E

I

I

I

thJA

P

P

thJF

, T

I

I

DM

SM

I

AS

GS

DS

AS

D

D

S

D

D

stg

FEATURES

D TrenchFETr Power MOSFETS

D 100% R

APPLICATIONS

D Buck Converter

D Synchronous Rectifier

G

N-Channel MOSFET

− Secondary Rectifier

Typical

34

67

15

D

S

g

Tested

−55 to 150

Limit

"20

"50

100

2.7

6.5

4.2

3.0

2.0

30

26

21

17

14

50

45

Maximum

Vishay Siliconix

41

80

19

Si4856ADY

www.vishay.com

Unit

Unit

_C/W

C/W

mJ

_C

W

W

V

V

A

A

1

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