SI4834DY-T1-E3 Vishay Semiconductors, SI4834DY-T1-E3 Datasheet
SI4834DY-T1-E3
Manufacturer Part Number
SI4834DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet
1.SI4834DY-T1-E3.pdf
(6 pages)
Specifications of SI4834DY-T1-E3
Case
SOP8
Date_code
09+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4834DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 941
Part Number:
SI4834DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71183
S-31062—Rev. B, 26-May-03
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
V
i
V
DS
DS
Ordering Information: Si4834DY
30
30
30
(V)
J
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
(V)
ti
G
G
S
S
1
1
2
2
t A bi
1
2
3
4
Diode Forward Voltage
Parameter
Parameter
J
J
a
a
= 150_C)
= 150_C)
t
a
a
Si4834DY-T1 (with Tape and Reel)
0.030 @ V
0.022 @ V
Top View
0.50 V @ 1.0 A
SO-8
r
V
DS(on)
SD
a
a
(v)
GS
GS
(W)
= 4.5 V
= 10 V
8
7
6
5
a
Steady-State
Steady-State
t v 10 sec
T
T
T
T
D
D
D
D
A
A
A
A
1
1
2
2
= 25_C
= 70_C
= 25_C
= 70_C
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Symbol
I
I
D
F
T
R
7.5
6.5
R
R
2.0
V
J
V
(A)
I
(A)
P
P
, T
DM
thJA
thJC
I
I
I
GS
DS
D
D
S
D
D
stg
G
1
N-Channel MOSFET
Typ
52
93
35
D
MOSFET
10 secs
1
S
1
D
7.5
6.0
1.7
2.0
1.3
1
Max
62.5
110
Schottky Diode
40
- 55 to 150
"20
30
30
Typ
53
93
35
Steady State
Schottky
Vishay Siliconix
G
2
5.7
4.6
0.9
1.1
0.7
N-Channel MOSFET
Si4834DY
Max
D
62.5
110
40
2
S
2
D
www.vishay.com
2
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1
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